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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Moghadami, S. JalaiBidgoli, F. Ardalan, S. |
| Copyright Year | 2014 |
| Description | Author affiliation: EE. Dept., Amirkabir Univ. of Technol., Tehran, Iran (JalaiBidgoli, F.) || EE. Dept., San Jose State Univ., San Jose, CA, USA (Moghadami, S.; Ardalan, S.) |
| Abstract | This paper presents a novel design methodology for high power terahertz and submillimeter wave CMOS amplifiers. This approach is a microwave-based method, commonly used for designing amplifiers with operation frequencies close to maximum oscillation frequency $(f_{max})$ of the transistors. This approach calculates the optimum conditions by monitoring active region of the devices in order to attain maximum accessible transistor power gain $(G_{acc}).$ Limitations of existing methods and improvements upon them are investigated through both theory and simulation. Finally, a 100 GHz single-stage high-power submillimeter wave amplifier with a gain of 3.75 dB is designed and simulated in 130nm CMOS technology using the proposed microwave approach. |
| Sponsorship | IEEE Circuits Syst. Soc. |
| Starting Page | 92 |
| Ending Page | 97 |
| File Size | 1055843 |
| Page Count | 6 |
| File Format | |
| ISBN | 9781479933785 |
| ISSN | 21641706 |
| DOI | 10.1109/SOCC.2014.6948906 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2014-09-02 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Transistors Gain CMOS integrated circuits Inductors CMOS technology Stability analysis Semiconductor device modeling analog Amplifier f |
| Content Type | Text |
| Resource Type | Article |
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