NDLI: An emissivity-invariant condition of silicon wafers and its application to radiation thermometry

Content Provider	IEEE Xplore Digital Library
Author	Iuchi, T. Gogami, A.
Copyright Year	2009
Description	Author affiliation: Department of Mechanical Engineering, Toyo University, Saitama, Japan (Iuchi, T.) \|\| School of Engineering, Toyo University, Saitama, Japan (Gogami, A.)
Abstract	The emissivity behavior of a silicon wafer is simulated using a simple modeling of the spectral, directional and polarization characteristics of thermal radiation. This study reveals that the p-polarized spectral emissivity of the silicon wafer at a specified direction remains constant. Then, subsequent experiments confirmed the simulated results that the p-polarized emissivity of silicon wafers is maintained to be 0.83 at an angle of 55.4° and a wavelength of 0.9 µm in spite of wide variations in oxide film thickness from 0 to 950 nm, temperature over 900 K as well as resistivity from 0.01 to 2000 Ωcm relevant to impurity concentrations doped into the silicon wafer. The overall extended uncertainty (k =2) of the temperature measurement is estimated to be 3.82 K over 900 K at the moment. This result is expected to enable significantly more accurate in situ radiation thermometry of silicon wafers in real manufacturing processes.
Starting Page	2806
Ending Page	2811
File Size	797192
Page Count	6
File Format	PDF
ISBN	9784907764340
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-08-18
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	SICE
Subject Keyword	Silicon Polarization Semiconductor device modeling Semiconductor process modeling Semiconductor films Temperature measurement Manufacturing processes Optical films Conductivity Impurities polarization emissivity silicon wafer
Content Type	Text
Resource Type	Article

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