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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Xiaochen Zhang White, M.H. |
| Copyright Year | 2011 |
| Description | Author affiliation: Electrical and Computer Engineering Department, Ohio State University, Columbus, OH 43210 (Xiaochen Zhang; White, M.H.) |
| Abstract | We present a quantum mechanical treatment of low-frequency noise in scaled NMOS transistors to extend the “unified” noise model [1] and include remote Coulomb scattering and surface roughness — new considerations in the theory. Our experimental work focuses on scaled NMOS device (as shown in Fig. 1 with a composite dielectric consisting of a 0.5 nm oxide covered with a high-K, 1.6nm hafnium oxide with a metal gate, as previously reported in [2]. In the past, Coulomb scattering was assumed to arise from trapping centers located at the Si-SiO interface [3]; however, this cannot give rise to a 1/f noise spectrum. We model remote Coulomb scattering into the dielectric film as traps in these films easily lie within a tunneling distance of the interface. This approach explains the decrease in the Coulomb scattering parameter (α) as a function of gate voltage. In addition, we introduce surface roughness scattering through fluctuations in the normal electric field due to fluctuations in the free carrier density with a surface scattering parameter proportional to the SPICE surface roughness parameter, θ. |
| Starting Page | 1 |
| Ending Page | 2 |
| File Size | 145930 |
| Page Count | 2 |
| File Format | |
| ISBN | 9781457717550 |
| e-ISBN | 9781457717567 |
| DOI | 10.1109/ISDRS.2011.6135331 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2011-12-07 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Scattering Fluctuations Noise Surface roughness Logic gates Rough surfaces MOSFETs |
| Content Type | Text |
| Resource Type | Article |
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