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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Lim, P.S.Y. Qian Zhou Dongzhi Chi Yee-Chia Yeo |
| Copyright Year | 2011 |
| Description | Author affiliation: Institute of Materials Science and Engineering, A∗STAR, Singapore (Dongzhi Chi) || Department of Electrical and Computer Engineering and NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore, Singapore (Lim, P.S.Y.; Qian Zhou; Yee-Chia Yeo) |
| Abstract | High contact resistance R at the silicide/semiconductor interface could limit the drive current in Field Effect Transistors (FETs) at sub-22 nm technology $nodes.^{1}$ For n-channel FETs, lowering the effective electron Schottky Barrier Height $Φ^{n}$ at the silicide/semiconductor interface will reduce R. Incorporating rare earth materials such as Dysprosium (Dy) during nickel silicidation to form Ni-Dy alloy $contacts^{2}$ has been reported to lower $Φ^{n}.$ Previously, the $Φ^{n}$ lowering was attributed to the formation of a Dy-rich interlayer between the silicide and semiconductor. In this paper, we report new findings that NiSi formation is the main reason for the reduction in $Φ^{n}$ for Dy-incorporated Ni silicides. |
| Starting Page | 1 |
| Ending Page | 2 |
| File Size | 403917 |
| Page Count | 2 |
| File Format | |
| ISBN | 9781457717550 |
| e-ISBN | 9781457717567 |
| DOI | 10.1109/ISDRS.2011.6135352 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2011-12-07 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Nickel Silicon Silicides Educational institutions FETs Silicidation |
| Content Type | Text |
| Resource Type | Article |
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