NDLI: Semiconductor Device Scaling: Physics, Transport, and the Role of Nanowires

Content Provider	IEEE Xplore Digital Library
Author	Ferry, D.K. Akis, R. Cummings, A. Gilbert, M.J. Ramey, S.M.
Copyright Year	2006
Description	Author affiliation: Department of Electrical Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287-5706 (Ferry, D.K.)
Abstract	Nanoelectronics generally refers to nanometer scale devices, and to circuits and architectures which are composed of these devices. Continued scaling of the devices into the nanometer range leads to enhanced information processing systems. Generally, this scaling has arisen from three major sources, one of which is reduction of the physical gate length of individual transistors. Until recently, this has also allowed an increase in the clock speed of the chip, but power considerations have halted this to levels around 4 GHz in Si. Indeed, there are indications that scaling itself may be finished by the end of this decade. There are now pushes to seek alternative materials for nano-devices that may supplement the Si CMOS in a manner that allows both higher speeds and lower power. In this paper, I will cover some of the impending limitations, and discuss some alternative approaches that may signal continued evolution of integrated circuits beyond the end of the decade.
Starting Page	415
Ending Page	418
File Size	468850
Page Count	4
File Format	PDF
ISBN	1424400775
DOI	10.1109/NANO.2006.247675
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-07-17
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Semiconductor devices Physics Nanowires MOSFET circuits Nanoscale devices Ballistic transport Solid state circuits Nanoelectronics Material properties Clocks ballistic transport nanoelectronics nanowires discrete impurities
Content Type	Text
Resource Type	Article

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