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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Anderson, T.J. Tadjer, M.J. Hobart, K.D. Feygelson, T.I. Caldwell, J.D. Mastro, M.A. Hite, J.K. Eddy, C.R. Kub, F.J. Butler, J.E. Pate, B.B. |
| Copyright Year | 2011 |
| Description | Author affiliation: Naval Research Laboratory, USA (Anderson, T.J.; Hobart, K.D.; Caldwell, J.D.; Mastro, M.A.; Hite, J.K.; Eddy, C.R.; Kub, F.J.; Pate, B.B.) || SAIC, Inc., USA (Feygelson, T.I.; Butler, J.E.) || Universidad Politécnica de Madrid, Spain (Tadjer, M.J.) |
| Abstract | Self-heating (reduction of drain current due to lower carrier mobility caused by increased phonon scattering at high drain fields) in high electron mobility transistors (HEMTs) has been well-documented in the literature. However, attempts to alleviate it have been limited. Heat spreading schemes have involved growth of AlGaN/GaN on single crystal [1] or CVD [2] diamond, or capping of fully-processed HEMTs using nanocrystalline diamond (NCD) [3]. All approaches have suffered from reduced HEMT performance or limited substrate size. Recently, a “diamond-before-gate” approach has been successfully demonstrated to both improve the thermal budget of the process by depositing NCD before the thermally sensitive Schottky gate, and to enable large-area diamond implementation [4]. A cross-section of such a device is shown in Figure 1. |
| Starting Page | 1 |
| Ending Page | 2 |
| File Size | 253074 |
| Page Count | 2 |
| File Format | |
| ISBN | 9781457717550 |
| e-ISBN | 9781457717567 |
| DOI | 10.1109/ISDRS.2011.6135264 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2011-12-07 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | HEMTs MODFETs Diamond-like carbon Temperature measurement USA Councils Logic gates Semiconductor device measurement |
| Content Type | Text |
| Resource Type | Article |
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