NDLI: Effect of annealing temperature on the barrier height of nano-particle embedded Ni-contacts to 4H-SiC

Content Provider	IEEE Xplore Digital Library
Author	Min-Seok Kang Jung-Ho Lee Hallen, A. Zetterling, C.-M. Sang-Mo Koo
Copyright Year	2011
Description	Author affiliation: Dept. of Electronic Materials Engineering, Kwangwoon University, Korea (Min-Seok Kang; Jung-Ho Lee; Sang-Mo Koo) \|\| KTH, Royal Inst. of Technology, Sweden (Hallen, A.; Zetterling, C.-M.)
Abstract	In order to realize stable SiC (Silicon carbide) devices, metal contacts to SiC with suitable physical and electrical characteristics are required. For example, Ohmic contacts with low specific contact resistances and Schottky contacts with controlled barrier height (Φ) between SiC and metal are among the most important factors for determining the performance of SiC devices. To date, extensive studies have been carried out on the properties of barrier height of various metals on n- and p-type for SiC and many attempts have been made to modify the contact barrier height on SiC depending on the annealing temperature. To change effectively lower the barrier height of the metal/SiC structures, it was required to anneal the contact formed on highly doped 4H-SiC substrates $(>10^{18}$ $cm^{−3})$ at high temperatures (900∼1000 °C) [1]. Recently, the electrical contacts to SiC includes the implementation of nanostructures such as metal nano-partices (NPs) to modify the barrier height at metal-SiC interfaces and to alter fundamental SiC device properties by controlling the size of the metal NPs [2]. Previous results in the literature have been primarily focused on the effect of size reduction of NPs on the characteristics of diode structures with embedded NPs, which experimentally investigates the change in transport properties of metal/semiconductor interfaces in SiC depending on the size of NPs. However, so far the focus has been mainly on the scaling effect of NPs rather than on altering the electrical barrier of the NPs [3].
Starting Page	1
Ending Page	2
File Size	386022
Page Count	2
File Format	PDF
ISBN	9781457717550
e-ISBN	9781457717567
DOI	10.1109/ISDRS.2011.6135231
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-12-07
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon carbide Nickel Annealing Educational institutions Ohmic contacts
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
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The thermal stability of Ni and Ni/Au ohmic contacts to n-type 4H-SiC

Simultaneous study of nickel based ohmic contacts to Si-face and C-face of n-type silicon carbide

Microanalysis of Ni/Si ohmic contacts to n-SiC

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Barrier non-uniformity of annealed Ni/4H-SiC Schottky contacts with temperature

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Effect of annealing temperature on the barrier height of nano-particle embedded Ni-contacts to 4H-SiC

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