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Content Provider | IEEE Xplore Digital Library |
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Author | Arora, Vijay Tan, M. |
Copyright Year | 2011 |
Description | Author affiliation: Universiti Teknologi Malaysia, Malaysia (Arora, Vijay; Tan, M.) |
Abstract | A carbon nanotube field-effect transistors (CNTFET) as a substitute for metal oxide-semiconductor field-effect transistors (MOSFETs) for digital logic applications holds a great prospective because of its superior transport properties. It is revealed that a CNT channel has a higher current density, lower energy consumption and lower delay propagation. CNTFETs adopt the smallest contact size permitted by 45 nm MOSFET design rules for comparison. The effects of interconnects is also incorporated into the model. SPICE model for CNTFET logic gates is assessed in term of energy-delay-product (EDP) and power-delay-product (PDP). The circuit-compatible model based on the formalism of Deng et. al [1] to study the functionality and performance of CMOS-like CNTFET. |
Starting Page | 1 |
Ending Page | 2 |
File Size | 183239 |
Page Count | 2 |
File Format | |
ISBN | 9781457717550 |
e-ISBN | 9781457717567 |
DOI | 10.1109/ISDRS.2011.6135159 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2011-12-07 |
Publisher Place | USA |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | CNTFETs Logic gates MOSFETs Integrated circuit modeling Integrated circuit interconnections Performance evaluation |
Content Type | Text |
Resource Type | Article |
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