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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Mehrotra, S.R. Paul, A. Klimeck, G. |
| Copyright Year | 2011 |
| Description | Author affiliation: Department of Electrical & Computer Engineering, Purdue University, USA (Mehrotra, S.R.; Paul, A.; Klimeck, G.) |
| Abstract | Ge exhibits a high bulk hole mobilty making it an attractive channel material for pMOSFET devices [1,2]. For improving the device performance and suppressing short channel effects ultra-thin-body (UTB) Ge-on-insulator (GeOI) structures have been researched throughly [2]. Recently <110> oriented Ge-OI pMOSFETs grown on (110) surface were shown to exhibit enhanced hole mobility, which was 3 times compared to (100)/<100> Si and 2.3 times (100)/<100> Ge pMOSFETs [2]. Due to heavy warping within valence bands and finite atomic granularity in sub-10 nm thick devices, atomistic modelling becomes important. To analyse the recent experimental results a tight binding based 10 band sp3s∗d5 (including SO coupling) bandstructure model for is used for UTB Ge [3]. It has been reported in literature that carrier mobility is closely correlated with carrier injection velocity near the top-of-the barrier or the virtual source region [4]. Hence in this paper ballistic injection velocity (v) is used as the metric for analysing UTB Ge device performance. |
| Starting Page | 1 |
| Ending Page | 2 |
| File Size | 540873 |
| Page Count | 2 |
| File Format | |
| ISBN | 9781457717550 |
| e-ISBN | 9781457717567 |
| DOI | 10.1109/ISDRS.2011.6135372 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2011-12-07 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Strain MOSFETs Silicon USA Councils Correlation Effective mass Performance evaluation |
| Content Type | Text |
| Resource Type | Article |
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