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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Bowei Zhang Qiuchen Yuan Zhenyu Li Zaghloul, M.E. |
| Copyright Year | 2011 |
| Description | Author affiliation: The Inst. of MEMS&VLSI Tech., the George Washington University, Washington DC, USA (Bowei Zhang; Qiuchen Yuan; Zhenyu Li; Zaghloul, M.E.) |
| Abstract | Recently, Single Photon Avalanche Diode (SPAD) draws attentions because of its applications in bio-molecule detection [1] and optical communication [2]. In order to reduce the cost and improve the detection throughput, one trend is to integrate large number of SPAD pixels with readout circuit and signal processing circuit on one silicon chip. In this paper, a SPAD is designed and simulated based on the standard CMOS 0.5¼m technology. This design uses lateral diffusion of n-wells to form a low doping n-guard ring to suppress perimeter breakdown at the pn junction edge. To prove our design can prevent perimeter breakdown, we used the semiconductor device simulation to show where the breakdown happened on junction. Our proposed SPAD design doesn't need advanced CMOS process, therefore allows designer to integrate large number of SPAD pixels with relative lower cost. |
| Starting Page | 1 |
| Ending Page | 2 |
| File Size | 445648 |
| Page Count | 2 |
| File Format | |
| ISBN | 9781457717550 |
| e-ISBN | 9781457717567 |
| DOI | 10.1109/ISDRS.2011.6135376 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2011-12-07 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Junctions Doping Electric breakdown Microfluidics Fluorescence Photonics CMOS integrated circuits |
| Content Type | Text |
| Resource Type | Article |
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