NDLI: Evaluation of COTS silicon carbide photodiodes for a radiation-hard, low-energy x-ray spectrometer

Content Provider	IEEE Xplore Digital Library
Author	Terry, J.R. Distel, J.R. Kippen, R.M. Schirato, R. Wallace, M.S.
Copyright Year	2011
Description	Author affiliation: Space Science and Applications Group (ISR-1) at Los Alamos National Laboratory, USA (Terry, J.R.; Distel, J.R.; Kippen, R.M.; Schirato, R.; Wallace, M.S.)
Abstract	Wide band-gap semiconducting materials such as silicon carbide (SiC) are attractive alternatives for radiation detection in more rugged environments due to low leakage currents, superior radiation hardness, and temperature insensitivity. However, the development of these technologies has been hindered by serious materials problems that restrict the quality and size of detector grade crystals. Recent developments in epitaxial growth of thin crystals on a substrate are yielding detector-grade material of reasonable dimension. While applications for ionizing radiation detectors are still limited primarily to small academic and R&D ventures, an active market exists for very thin epitaxial SiC photodiodes for the purpose of detecting UV light in high-temperature environments. The purpose of this project is to evaluate the utility of these commercially available SiC UV photodiodes for the purpose of detection and measurement of low-energy x-rays. We present results from bench-top electronic characterization, radioactive source measurements, x-ray source measurements at Los Alamos National Lab, and responsivity measurements performed at the National Synchrotron Light Source at Brookhaven National Lab.
Starting Page	485
Ending Page	488
File Size	824066
Page Count	4
File Format	PDF
ISBN	9781467301183
ISSN	10823654
e-ISBN	9781467301206
DOI	10.1109/NSSMIC.2011.6153906
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-10-23
Publisher Place	Spain
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photodiodes Photonics Silicon Integrated circuits Pulse measurements Capacitance-voltage characteristics
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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Evaluation of COTS silicon carbide photodiodes for a radiation-hard, low-energy x-ray spectrometer

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