NDLI: Range studies of aluminum, boron, and nitrogen implants in 4H-SiC

Content Provider	IEEE Xplore Digital Library
Author	Stief, R. Lucassen, M. Schork, R. Ryssel, H. Holzlein, K.-H. Rupp, R. Stephani, D.
Copyright Year	1999
Description	Author affiliation: Fraunhofer Inst. fur Integrierte Schaltungen, Erlangen, Germany (Stief, R.)
Abstract	Ion implantation is the only suitable method for selective area doping of silicon carbide because of the small diffusivity of impurities. For device processing, knowledge of depth and shape of impurity profiles is crucial. In this study, aluminum, boron, and nitrogen ions were implanted into 4H-SiC within a wide energy range of 10-400 keV. The depth distributions were analyzed by both secondary ion mass spectrometry and an optimized fit routine to extract the range parameters. Together with new fit formulas for the range moments a significantly improved simulator for ion profiles is established. A modified electronic stopping power is given for TRIM and RAMM, respectively, to simulate profiles in amorphized hexagonal silicon carbide. The dose dependence of aluminum profiles is investigated as well.
Starting Page	760
Ending Page	763
File Size	337365
Page Count	4
File Format	PDF
ISBN	078034538X
DOI	10.1109/IIT.1998.813778
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-06-22
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Aluminum Boron Nitrogen Implants Silicon carbide Impurities Ion implantation Doping Shape Mass spectroscopy
Content Type	Text
Resource Type	Article

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