NDLI: Large area 4H-SiC power MOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Agarwal, A. Sei-Hyung Ryu Das, M. Lipkin, L. Palmour, J. Saks, N.
Copyright Year	2001
Description	Author affiliation: Cree Inc., Durham, NC, USA (Agarwal, A.)
Abstract	This paper describes the design and fabrication of 4H-SiC, n-channel Power MOSFETs. For the first time, we have achieved 350 V, 10 A (V/sub F/=4.4 V) devices with an active area of 0.105 cm/sup 2/ (3.3 mm /spl times/3.3 mm). This represents a specific on-resistance of 43 m/spl Omega//spl middot/cm/sup 2/ for a cell pitch of 25 /spl mu/m (160,000 cells/cm/sup 2/). We have also achieved R/sub on,sp/=23 m/spl Omega//spl middot/cm/sup 2/ on smaller cells with a cell pitch of 16 /spl mu/m (390,000 cells/cm/sup 2/). An important issue in 4H-SiC MOSFETs is extremely low effective channel mobility (/spl mu//sub neff/) in the implanted p-well regions. It is shown that Al-implanted p-wells require at least 1600/spl deg/C activation anneal to achieve reasonable bulk hole mobility. Annealing at high temperatures causes surface roughness which degrades /spl mu//sub neff/ compared to low power MOSFETs made on a p-epilayer. NO annealing of the gate oxide and a buried channel structure are used for increasing /spl mu//sub neff/. A Buried channel (BC) structure with 1.7/spl times/10/sup 12/ cm/sup -2/ charge in the channel showed a high /spl mu//sub neff/ (195 cm/sup 2//V/spl middot/s) utilizing bulk buried channel, but resulted in a normally-on device. However, it is shown that by controlling the charge in the BC layer, a normally-off device with a high /spl mu//sub neff/ can be produced.
Sponsorship	Inst. Electr. Eng. Japan
Starting Page	183
Ending Page	186
File Size	477905
Page Count	4
File Format	PDF
ISBN	4886860567
ISSN	10636854
DOI	10.1109/ISPSD.2001.934585
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2001-06-07
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Inst. Of Electrical Engineers Japan
Subject Keyword	MOSFETs Annealing Implants Voltage Doping Aluminum Dielectrics Silicon carbide FETs Laboratories
Content Type	Text
Resource Type	Article

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