NDLI: Dose rate dependence of residual defects in device grade Si/SiGe heterostructures formed by ion beam synthesis

Content Provider	IEEE Xplore Digital Library
Author	Nejim, A. Cristiano, F. Knights, A.P. Barradas, N.P. Hemment, P.L.F. Coleman, P.G.
Copyright Year	1999
Description	Author affiliation: Sch. of Electron. Eng., Surrey Univ., Guildford, UK (Nejim, A.)
Abstract	The influence of germanium ion current density on the residual defects in ion implanted Si/SiGe heterostructures is investigated. Data from [100] silicon wafers implanted with 400 keV 9/spl times/10/sup 16/ Ge/sup +//cm/sup 2/ shows that both the nature and concentration profile of residual defects below the amorphised silicon surface layer are highly sensitive to the Ge/sup +/ current density. Dose rates in the range of 7.3/spl times/10/sup 12/ Ge/sup +//s.cm/sup 2/ and 1.5/spl times/10/sup 12/ Ge/sup +//s.cm/sup 2/ corresponding to power loading of 0.47 W/cm/sup 2/ and 0.09 W/cm/sup 2/ respectively, were investigated in this study. The nature and concentration of the defects was investigated by Rutherford Backscattering Channelling analysis (RBS-c), cross section Transmission Electron Microscopy (xTEM) and Positron Annihilation Spectroscopy (PAS) in conjunction with anodic oxidation and wet etching. RBS-c indicates that by increasing the dose rate from 5 /spl mu/A/cm/sup 2/ to 13 /spl mu/A/cm/sup 2/ reduces the thickness of the amorphous layer from 550 nm to 350 nm. A further increase to 20 /spl mu/A/cm/sup 2/ inhibits the formation of an amorphous layer due to dynamic annealing. This is associated with a significant increase in the depth profile of interstitial defects down to a depth of 800 nm. As in the case of interstitial defects, there is a considerable enhancement in the depth and concentration of open volume defects with increasing dose rate found by PAS analysis. For the highest dose rate open volume defects extend beyond 1.5 /spl mu/m at a concentration in excess of 1/spl times/10/sup 16//cm/sup 2/. Post amorphisation with Si/sup +/ implantation removes all the Ge/sup +/ implant related defects leaving strain related defects and deep band of end of range defects.
Starting Page	692
Ending Page	695
File Size	384257
Page Count	4
File Format	PDF
ISBN	078034538X
DOI	10.1109/IIT.1998.813761
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-06-22
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon germanium Germanium silicon alloys Current density Amorphous materials Backscatter Transmission electron microscopy Positrons Spectroscopy Oxidation Wet etching
Content Type	Text
Resource Type	Article

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