NDLI: Ion-implanted reservoirs and self-organized growth

Content Provider	IEEE Xplore Digital Library
Author	Brongersma, S.H. Castell, M.R. Perovic, D.D.
Copyright Year	1999
Description	Author affiliation: Dept. of Phys. & Astron., Univ. of Western Ontario, London, Ont., Canada (Brongersma, S.H.)
Abstract	Interaction between clusters through e.g. coalescence and Ostwald ripening inhibits the study of individual cluster growth. However, using an ion-implanted reservoir we have been able to create a dilute morphology of non-interacting CoSi/sub 2/ clusters on a Si surface. In this scenario each cluster is connected to the implanted layer by a diffusive link, thus providing a continuous supply of cobalt. As cluster volume increases, the initially square shape is only stable up to a certain critical size, at which a shape transition occurs. A further increase of cluster volume results in a rapidly increasing length while the cluster width reduces back to /spl alpha//sub 0/. The resulting wire-like structures of uniform width confirm all details of the transition as predicted by Tersoff and Tromp.
Starting Page	1242
Ending Page	1245
File Size	416619
Page Count	4
File Format	PDF
ISBN	078034538X
DOI	10.1109/IIT.1998.813912
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-06-22
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Reservoirs Shape Surface morphology Lattices Crystalline materials Physics Astronomy Materials science and technology Cobalt Tin
Content Type	Text
Resource Type	Article

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