NDLI: 3-dimensional implantation profiles: The spatial distribution of Nd in Si

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Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on

2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432)

1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144)

Volume 2 - 1999

Progress in computer simulation for ion-solid interaction

Defect production and evolution during and after ion implantation studied by a combination of time-ordered BCA and MD simulations

Electron-volt, high current implants into silicon SDR (Surface damage region) and the effect of anneal time to form 200 to 700 angstrom, low leakage junctions

Formation of Si-C films using negative ion beam sputtering

Characterisation of ultra-shallow junctions using advanced SIMS, SRP and HRTEM techniques

Dose rate dependence of residual defects in device grade Si/SiGe heterostructures formed by ion beam synthesis

The long range effect in high dose ion implanted titanium nitride

Experimental verification of a new physically based low energy (<5 keV) ion implant model

Defect formation in MeV ion implantation of boron and phosphorus

3-dimensional implantation profiles: The spatial distribution of Nd in Si

Low energy (0.25-10 keV) /sup 11/B/sup +/ ion implantation damage characterisation using Rutherford backscattering spectrometry

Comparison of silicon etching properties between F/sup -/ negative ion and SF/sub 3//sup +/ positive ion-beam etchings

Critical angle of channeling for low energy ion implantation

Influence of high dose low energy ion implantation on dopant depth profile

TiN preparation by PBII using titanium arc plasma in nitrogen gas

Uniform spike anneals of ultra low energy boron implants using xR LEAP and RTP Centura XE/sub plus/: ramp rate effects up to 150/spl deg/C/sec

Surface swelling of MeV Si ion implanted silicon

Modeling the as-implanted distribution of antimony and indium

Secondary defects in 1-10 keV As- and BF/sub 2/-implanted Si

Boron nitride film deposition by reactive sputtering with ECR plasma

Formation of large-area TiO/sub 2/ thin-films in electron cyclotron resonance sheet plasma and their characterization

Extended defects in silicon by MeV B++ implantation in different 8" Cz-Si wafers

Range studies of aluminum, boron, and nitrogen implants in 4H-SiC

A comparison of shallow implantation between B, BF/sub 2/ and B/sub 10/H/sub 14/ by molecular dynamics simulation

Crystalline effect on the lateral spread of implanted ions

Effects of O ion dose on the formation of copper oxide nanoparticles in silica glasses by implantation with high-energy Cu and O ions

Silicon-aluminum oxynitride composite films deposited by reactive ion beam sputtering

Study on surface swelling of SiC by high-dose He-ion implantation

Conversion electron Mossbauer spectroscopy (CEMS) and X-ray diffraction studies of 40 keV He-irradiated SUS304 austenitic stainless steel

The effect of the impurity content and of the surface on the electrical activation of low energy implanted boron in crystalline Si

Synthesis of carbon nitride films by ECR sputtering deposition method

A sophisticated FIB system with a new very low energy ion gun for nm-finishing

Angular distribution of cluster atoms due to cluster impact

Computer studies on projected range due to few eV to keV cluster impacts

Computer simulation of decaborane implantation and rapid thermal annealing

In-situ ion implantation of Xe into Al with high-resolution high-voltage electron microscopy

Ion bombardment of organic materials and its potential application

Comparison of FIB-induced physical and chemical etching

Progress in ion implantation technology for metal surface treatments and other related topics

Ion beam processing for silicon-based light emission

Blue photoluminescence emission from thermal SiO/sub 2/ films implanted with carbon

Contact reactions and silicide formation in implanted channels under high current density

Transient enhanced diffusion in low energy arsenic implanted silicon

A novel method to suppress transient enhanced diffusion of low energy implanted boron based on reactive plasma etching

Peculiarities of implantation of silicon with intensive beams of B/sup +/ and BF/sub 2//sup +/ ions

Advanced beam and materials technologies for new industrial production

Transient enhanced diffusion from implantation of molecular decaborane ions

Narrow CoSi/sub 2/ line formation on SiO/sub 2/ by focused ion beam

Thermal oxidation and characterization for surface layers of Al implanted TiN films

Ion implantation of stainless steel heater alloys for anti-fouling applications

Modification of metals and hard coatings using vacuum-arc metal ion implantation

Formation of Fe/sub 16/N/sub 2/ in deformed iron by ion implantation method

Structural characterization of Ca-ion implanted GaN

Effect of the evaporation temperature of an organic precursor on the properties of silicon containing diamond-like carbon (Si-DLC) coatings synthesized by ion beam assisted deposition (IBAD)

Electrical characterization of 180 nm CMOS devices by spreading resistance profiling

Simultaneous ion beam deposition of positive and negative ions for the production of Au-N systems

The role of extended defects on the formation of ultra-shallow junctions in ion implanted /sup 11/B/sup +/, /sup 49/BF/sub 2/, /sup 75/As/sup +/ and /sup 31/P/sup +/

Electron field emission from diamond-like carbon film under pulsed DC supply

Characterisation of low energy boron implants and electrical results of submicron PMOS transistors

The chemical effect of fluorine on boron transient enhanced diffusion

The surface proximity effect on the formation of extended defects in ion beam synthesised SiGe/Si heterostructures

Protein adsorption on titanium oxide films synthesized by ion beam assisted deposition

B activation and F redistribution in low energy BF2+ implanted silicon

Visible photoluminescence from Tb/sup 3+/ ions implanted into a SiO/sub 2/ film on Si at room temperature

Influence of induced defects on the ultra thin film growth by low energy ion beam deposition

Sensitive evaluation of ion implantation using short wavelength laser induced photo-acoustic displacement

MeV implantation introduced damage at the LOCOS bird's beak in 0.35 /spl mu/m flash memory devices

Ion beam mixing of Au/Fe multilayers by Ar ion implantation

Synthesis of CeO/sub 2/ films by ion beam assisted deposition

Diffusion and activation behaviors of boron by incorporated nitrogen ions in ammonia ambient

Fluorine effect on boron diffusion: chemical or damage?

Precise, fast and accurate depth profiling of sub-keV to MeV B implants in Si

A study on the defects in the fabrication of CMOS retrograde well including a buried layer using MeV ion implantation

Enhanced field electron emission from nitrogen doped tetrahedral amorphous carbon film

Short-wavelength, light-emitting materials fabricated by Si and N ions coimplantation into SiO/sub 2/ films

Highly insulated SrTiO/sub 3/ thin films

Preparation of new carbon films by ion-beam-assisted plasma CVD

Fabrication of ultrasonic sensor using silicon membrane

Ion implantation into silica fibers and metal wires

Visual observation of decelerated ion beam trajectories by using electronically excited molecular ions (N/sub 2//sup +/ or CO/sup +/) in IBD system

Formation of vanadium oxide by ion implantation and heat treatment

Ion mass and energy dependence of ion-beam-induced epitaxial crystallization of SrTiO/sub 3/

Growth of perylene pigment thin films using an ionized cluster beam method and its application to photocurrent multiplication devices

Formation of nickel silicide on nitrogen ion implanted silicon

Suppression of dislocation multiplication inside contact holes

Effective gettering of oxygen by high dose, high energy boron buried layers

Gettering of Fe, Cu, and Ni by high dose boron buried layers

The effect of ramp rate and annealing temperature on boron transient diffusion in implanted silicon: kinetic Monte Carlo simulations

Atomic scale modeling of boron transient diffusion in silicon

Tribology and wettability of Na-ion implanted glassy carbon

Impurities in IBAD processes

Composition, structure and optical properties of aluminum nitride films formed by low energy ion beam assisted deposition

Role of annealing time on junction depth for high dose phosphorus implants

In-situ observation of focused ion beam micromilled Si, SiO/sub 2/ and GaAs

Magnetic irreversibility of copper-oxide superconductors by splayed irradiation of swift heavy ions

Dual ion implantation of non-dopant and dopant ions into Si for defect engineering of shallow p/sup +/-junctions

Structural and optical characterization of VO/sub x/ films doped with W by ion implantation

Solid-phase epitaxial crystallization of a B-delta-doped superlattice in Si

Electrical conductivity in ion implanted TiO/sub 2/-single crystals

Understanding the correlation of TXRF and surface SIMS

Cluster ion beam polishing for inertial confinement fusion target capsules

AlN film growth under N/sub 2//sup +/ ion bombardment onto Al surface

Improvement of localized corrosion resistance of austenitic stainless steel by N, Cr and Mo ion implantation

Adhesion improvement between metal thin films (Cu and Pt) and high surface free energy polyimide by ion assisted reaction

Electrical characteristics of Ni/Si and /spl alpha/-Fe/Si structures grown by low energy direct ion beam deposition

Influence of implantation of a few metal ions on the oxidation behaviour of TiAl at high temperatures

Formation of /spl beta/-SiC thin layers by implantation of carbon ions into silicon using MEVVA ion source

Thermal annealing behavior of iron implanted into alumina

Flux-line pinning in polycrystalline La/sub 1.85/Sr/sub 0.15/CuO/sub 4/ irradiated with swift heavy ions

Silicon fine structure formation on sapphire with focused ion beam

Growth of dilute GaAsN alloys by low-energy nitrogen ion beam impinging during GaAs molecular beam epitaxy

Study of defects in Si+ implanted GaAs layers by X-ray diffraction method

The importance of the native oxide for sub-keV ion implants

Defects remaining in Si after MeV ion implantation and annealing away from the peak of the nuclear energy deposition profile

Small angle glancing X-ray scattering for surface characterization of ion-implanted industrial materials

Influence of ambient nitrogen pressure on the property of zirconium nitride thin films in ion beam assisted deposition

Photovoltaic properties of ion beam synthesized /spl beta/-FeSi/sub 2//Si[100]

Silicon nitride layer in silicon formed by nitrogen implantation with multiple energy

Microanalysis of FIB induced deposited Pt films using ion microprobe

Properties of cubic boron nitride films prepared by ion beam assisted deposition

Surface modification of polymers by ion implantation for biocompatible materials: relations of platelet adhesion to irradiation effects

Development of a coaxial type vacuum arc evaporation source

Effect of boron ion implantation on oxidation resistance of CVD-SiC coated 2D-C/C composites

Effect of nitrogen doping on the structure and properties of tetrahedral amorphous carbon films

RBS/channeling, XRD and optical characterization of deep ion implantation into single crystalline SiO/sub 2/

Ultra-shallow 28-88 nm n/sup +//p junction formation using PH/sub 3/ and AsH/sub 3/ plasma immersion ion implantation

Low-energy implantations of decaborane (B/sub 10/H/sub 14/) ion clusters in silicon wafers

Ultra-shallow, abrupt, and highly-activated junctions by low-energy ion implantation and laser annealing

A new method for making shallow p-type junctions

Multiple species implants with pulsed and DC plasma immersion ion implantation

The effect of collisions on pulsed and DC plasma immersion ion implantation

Simulation of plasma-immersed implantation of trenches

Development of multi-beam gas cluster ion beam equipment for high quality ITO film formation at low temperatures

Formation of oxide thin films for optical applications by O/sub 2/-cluster ion beam assisted deposition

Negative-ion implanter for powders and uniform implantation without particle scattering

Fullerene ion (C/sub 60//sup +/) implantation in GaAs[100] substrate

Photoresist integrity and outgassing effects during plasma immersion ion implantation

Using dopant activation of implanted wafers for low temperature (400/spl deg/C-600/spl deg/C) measurement in CVD equipment design

Formation of diamond like carbon films by plasma source ion implantation from CH/sub 4/, C/sub 2/H/sub 2/ and C/sub 6/H/sub 6/

Study of PH/sub 3/ and B/sub 2/H/sub 6/ ion beam species generated by inductively coupled plasma

Evaluation of plasma doping for sub-0.18 /spl mu/m devices

Formation of complex clusters in Ar/O/sub 2/ gas cluster beams

Monte Carlo simulation of surface smoothing effect by cluster ions

Cluster size measurement of large Ar cluster ions with time of flight

Microcavities formed by hydrogen or helium plasma immersion ion implantation

Ion-implanted reservoirs and self-organized growth

Characterization of shallow junction transistors manufactured with plasma doping

Hydrogen free diborane ion source using 500 MHz RF discharge

Molecular dynamics study of implant and damage formation in low-energy boron cluster ion implantation

Boron diffusion in ultra low-energy (<1 keV/atom) decaborane (B/sub 10/H/sub 14/) ion implantation

STM observations of the annealing process of the damage caused by ion impact

Proceedings of 11th International Conference on Ion Implantation Technology

3-dimensional implantation profiles: The spatial distribution of Nd in Si

Content Provider	IEEE Xplore Digital Library
Author	Fink, D. Muller, M. Nakagawa, S.T. Hirata, K. Borong Shi Wang Ke Ming
Copyright Year	1999
Description	Author affiliation: Hahn-Meitner-Inst., Berlin, Germany (Fink, D.)
Abstract	Transversal components in ion implantation are available theoretically by the "TRIM" code, and experimentally by a modified tomographic reconstruction from 1-dimensional implantation distributions in various directions. Apart from many cases which reconfirm the 3D-TRIM predictions nicely, we found systems with pronounced deviations in 1 or 3 directions, due to either thermal or radiation-enhanced 3D-diffusion. A new code to treat this 3D post-implantational mobility is illustrated for the example "300 keV Nd/sup +/ in Si". Diffusional changes influence the ratio of lateral to transversal stragglings.
Starting Page	708
Ending Page	711
File Size	329595
Page Count	4
File Format	PDF
ISBN	078034538X
DOI	10.1109/IIT.1998.813765
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-06-22
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Neodymium Physics Tomography Chemicals Shape Ion implantation Anisotropic magnetoresistance Temperature History Predictive models
Content Type	Text
Resource Type	Article

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