NDLI: The surface proximity effect on the formation of extended defects in ion beam synthesised SiGe/Si heterostructures

Content Provider	IEEE Xplore Digital Library
Author	Cristiano, F. Nejim, A. Hemment, P.L.F.
Copyright Year	1999
Description	Author affiliation: Dept. of Electron. & Electr. Eng., Surrey Univ., Guildford, UK (Cristiano, F.)
Abstract	The relaxation of ion beam synthesised SiGe alloys occurs during solid phase epitaxial growth (SPEG) by a roughening of the amorphous/crystalline (a/c) interface, leading to the formation of extended defects. SiGe/Si structures have been formed by implantation of Ge/sup +/ ions at energies of 70 keV and 400 keV and doses above the critical value for strain relaxation, followed by post-amorphisation to a depth of /spl sim/1 /spl mu/m and regrowth at 700/spl deg/C. TEM and RBS analysis of the regrown structures show that relaxation-induced stacking faults (SFs) are nucleated in the vicinity of the peak of the Ge concentration. For an implantation energy of 70 keV, SFs are the only defects observed and they extend up to the surface. For an implantation energy of 400 keV, the SFs terminate within the bulk far from the surface while "hairpin" dislocations are also formed and extend up to the surface. These results are explained in terms of the ratio between the depth at which SFs are nucleated and the roughness of the a/c interface at that depth. Varying the defect nucleation depth by removing a surface layer from the structures implanted at 400 keV prior to SPEG does not result in a change of the size of the SFs, while "hairpin" dislocations are still formed, suggesting that the roughness of the a/c interface during regrowth is only determined by the Ge content in the alloy.
Starting Page	913
Ending Page	916
File Size	514141
Page Count	4
File Format	PDF
ISBN	078034538X
DOI	10.1109/IIT.1998.813817
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-06-22
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Proximity effect Rough surfaces Surface roughness Silicon germanium Germanium silicon alloys Ion beams Solids Epitaxial growth Amorphous materials Crystallization
Content Type	Text
Resource Type	Article

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