NDLI: Growth of perylene pigment thin films using an ionized cluster beam method and its application to photocurrent multiplication devices

Content Provider	IEEE Xplore Digital Library
Author	Sano, K. Watanabe, M. Takagi, T.
Copyright Year	1999
Description	Author affiliation: Ion Eng. Res. Inst. Corp., Osaka, Japan (Sano, K.)
Abstract	A basic technique to control the growth morphology and crystal structure of thin films of a perylene pigment, N,N' dimethylperylene-3,4:9,10-bis-dicarboximide (Me-PTC), using an ionized cluster beam (ICB) method has been developed. We deposited Me-PTC films on ITO coated glass substrates. The growth plane of Me-PTC film was found to change with deposition temperatures from [102] to [002], which corresponded to the parallel and the standing orientations of Me-PTC molecules, respectively. The optimum crystallinity was obtained at an accelerating voltage of the ICE (V/sub a/) of 300 V. We prepared specimens using this technique to evaluate the fundamental photocurrent multiplication effect (PME) in Me-PTC. The optimum operating temperature for the PME was found to be controlled by changing V/sub a/. A quantum efficiency of 12,500 in the PME can be attained at at room temperature, in the specimens prepared at a V, of 200 V. The ion assisted growth mechanisms of Me-PTC films, as well as the mechanism of the PME, are also discussed.
Starting Page	998
Ending Page	1001
File Size	399744
Page Count	4
File Format	PDF
ISBN	078034538X
DOI	10.1109/IIT.1998.813847
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-06-22
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Pigmentation Transistors Ion beams Temperature Morphology Indium tin oxide Glass Substrates Crystallization Acceleration
Content Type	Text
Resource Type	Article

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