NDLI: Multiple species implants with pulsed and DC plasma immersion ion implantation

Content Provider	IEEE Xplore Digital Library
Author	Linder, B.P. En, W.G. Cheung, N.W.
Copyright Year	1999
Description	Author affiliation: Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA (Linder, B.P.)
Abstract	Plasma Immersion Ion Implantation (PIII) is an emerging implant technology for high dose and low energy applications. Since PIII does not contain mass separation, all ion species in the plasma are implanted into the wafer. By utilizing an effective mass and an effective Bohm velocity for the plasma, the single species PIII model has been extended to multiple species. This model includes two components of ion current, the ions uncovered by the expanding sheath, and ions that diffuse across the sheath boundary. This new model calculates the dose rates for all the ion species in the plasma, and is valid for pulsed and DC PIII. Calculation and simulation show that the percentage of each ion implanted is a function of the pulse width. For a plasma containing 10% He/sup +/ and 90% PH/sub 3//sup +/, the implant is 90% PH/sub 3//sup +/ for short pulses, and only 76% PH/sub 3//sup +/ for longer pulses. For proper calibration and dosimetry it is imperative to understand that changing the pulse width will alter the implant ratios.
Starting Page	1179
Ending Page	1182
File Size	528197
Page Count	4
File Format	PDF
ISBN	078034538X
DOI	10.1109/IIT.1998.813894
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-06-22
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Implants Plasma immersion ion implantation Plasma sheaths Plasma applications Semiconductor device modeling Plasma simulation Space vector pulse width modulation Effective mass Helium Calibration
Content Type	Text
Resource Type	Article

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