NDLI: A study on the defects in the fabrication of CMOS retrograde well including a buried layer using MeV ion implantation

Content Provider	IEEE Xplore Digital Library
Author	Yoon-Taek Jang Tae-Hoon Huh Jae-Sang Ro
Copyright Year	1999
Description	Author affiliation: Dept. of Metall., Hong-Ik Univ., Seoul, South Korea (Yoon-Taek Jang)
Abstract	MeV ion implantation has been recently employed in the field of CMOS (complementary metal oxide semiconductor) retrograde well engineering. An issue on MeV ion induced damage is critical especially in forming a buried layer below the well. MeV B implanted buried layers were observed to show greatly improved characteristics of latchup suppression. Junction leakage current, however, showed a critical behavior as a function of ion dose. The rod-like defects were observed to be responsible for the leakage current. Rod-like defects were generated near the R/sub p/ (projected range) region and grown upward to the surface during annealing. According to cross sectional examination of etch pit density, they were generated and propagated between 700/spl deg/C and 800/spl deg/C. They shrink or change into long, elongated dislocation loops at higher temperatures above 900/spl deg/C. Results of SIMS (secondary ion mass spectroscopy) analyses and two-step-annealing (700/spl deg/C/3/spl sim/6 hrs./spl rarr/900/spl deg/C/1 hr.) indicate that interstitial oxygens impede shrinkage of existing rod-like defects at higher temperatures above 900/spl deg/C.
Starting Page	959
Ending Page	962
File Size	629290
Page Count	4
File Format	PDF
ISBN	078034538X
DOI	10.1109/IIT.1998.813837
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1998-06-22
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Fabrication Leakage current Ion implantation Etching Annealing Temperature Doping Impurities Electric variables Optical microscopy
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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