NDLI: Characterization and modeling of graphene field-effect devices

Content Provider	IEEE Xplore Digital Library
Author	Shepard, K.L. Meric, I. Kim, P.
Copyright Year	2008
Description	Author affiliation: Dept. of Electr. Eng., Columbia Univ., New York, NY (Shepard, K.L.; Meric, I.; Kim, P.)
Abstract	The novel electronic properties of graphene, including a linear energy dispersion relation and purely two-dimensional structure, have led to intense research into possible applications of this material in nanoscale devices. In this paper, we review the unique electronic properties of graphene that give it the potential for high frequency electronic applications. We then present the latest results on the current-voltage characteristics of top-gated graphene FETs. These devices show unique characteristics related to the ambipolar nature of the graphene channel. In addition, the devices show very high saturation velocities, suggesting the possibility for superior high frequency performance. Our initial devices have transconductances as high as 150 muS/mum despite low on-off current ratios, making the devices very suitable for analog/RF applications.
Starting Page	406
Ending Page	411
File Size	728688
Page Count	6
File Format	PDF
ISBN	9781424428199
ISSN	10923152
DOI	10.1109/ICCAD.2008.4681606
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-11-10
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Quantum capacitance Photonic band gap Nanotubes Dispersion Electrons FETs Charge carrier processes Electrostatics Dielectric substrates Physics
Content Type	Text
Resource Type	Article
Subject	Computer Graphics and Computer-Aided Design Computer Science Applications Software

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