NDLI: Large-scale atomistic approach to random-dopant-induced characteristic variability in nanoscale CMOS digital and high-frequency integrated circuits

Content Provider	IEEE Xplore Digital Library
Author	Yiming Li Chih-Hong Hwang Ta-Ching Yeh Tien-Yeh Li
Copyright Year	2008
Description	Author affiliation: Dept. of Commun. Eng., Nat. Chiao Tung Univ., Hsinchu (Yiming Li; Chih-Hong Hwang; Ta-Ching Yeh; Tien-Yeh Li)
Abstract	Modeling of device variability is crucial for the accuracy of timing in circuits and systems, and the stability of high-frequency application. Unfortunately, due to the randomness of dopant position in device, the fluctuation of device gate capacitance is nonlinear and hard to be modeled in current compact models. Therefore, a large-scale statistically sound ldquoatomisticrdquo device/circuit coupled simulation approach is proposed to characterize the random-dopant-induced characteristic fluctuations in 16-nm-gate CMOS integrated circuits concurrently capturing the discrete-dopant-number- and discrete-dopant-position-induced fluctuations. The variations of transition time of digital circuit (inverter, NAND, and NOR gates) and high-frequency characteristic of common-source amplifier are estimated. For the digital circuits, the function-dependent and circuit-topology-dependent characteristic fluctuations resulted from random nature of discrete dopants is for the first time discussed. This study provides an insight into random-dopant- induced intrinsic timing and high-frequency characteristic fluctuations. The accuracy of the simulation technique is confirmed by the use of experimentally calibrated transistor physical model.
Starting Page	278
Ending Page	285
File Size	1233181
Page Count	8
File Format	PDF
ISBN	9781424428199
ISSN	10923152
DOI	10.1109/ICCAD.2008.4681586
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-11-10
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	CMOS digital integrated circuits Large scale integration CMOS integrated circuits Fluctuations Semiconductor process modeling Semiconductor device modeling Timing Circuit simulation Digital circuits Accuracy high frequency circuit Device variability random dopant fluctuation timing digital circuit
Content Type	Text
Resource Type	Article
Subject	Computer Graphics and Computer-Aided Design Computer Science Applications Software

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