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Content Provider | IEEE Xplore Digital Library |
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Author | Hanqin Wu Xiaoping Liao |
Copyright Year | 2006 |
Description | Author affiliation: Key Lab. of MEMS, Southeast Univ., Nanjing (Hanqin Wu; Xiaoping Liao) |
Abstract | The RF characteristic of a RF MEMS switch with a package cap was studied in this paper based on simulation and analysis. Simulation was divided into two parts-the edge of the cap and the center of the cap, in order to observe the different effect level between the edge and the center of the cap on the switch. The thickness of the bonding layer and the depth of cavity were changed in simulations so as to detect the key factor which affects the effect level. We combined the simulation results with the microwave theory, calculated the changes of the switch impedance caused by the package cap. The simulated and calculated results were validated using the soft MicroWave Office |
Starting Page | 1 |
Ending Page | 4 |
File Size | 3196130 |
Page Count | 4 |
File Format | |
ISBN | 1424406196 |
DOI | 10.1109/ICEPT.2006.359770 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2006-08-26 |
Publisher Place | China |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Switches Radio frequency Radiofrequency microelectromechanical systems Coplanar waveguides Bonding Impedance Microswitches Electronics packaging Scattering parameters Microwave devices |
Content Type | Text |
Resource Type | Article |
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