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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Nan Wu Qingchun Zhang Chunxiang Zhu Chen Shen Li, M.F. Chan, D.S.H. Balasubramanian, N. |
| Copyright Year | 2005 |
| Description | Author affiliation: Dept. of Electr. & Comput. Eng., Singapore Nat. Univ. (Nan Wu; Qingchun Zhang; Chunxiang Zhu; Chen Shen; Li, M.F.; Chan, D.S.H.) |
| Abstract | High performance Ge p- and n-MOSFETs with CVD $HfO_{2}$ gate dielectric were fabricated. Charge trapping and $V_{th}$ instability were investigated systematically for the first time for Ge MOSFET with different surface treatments (silicon passivation and surface nitridation) and compared to the Si devices. Our results show that: (1) Ge devices with silicon passivation yield better electrical performance and reliability than those with surface nitridation; (2) Ge transistors with silicon passivation exhibit less NBTI degradation than the silicon counterparts; probably due to the larger hole barrier in Ge/dielectric than in Si/dielectric; and (3) PBTI degradation of the Ge transistors is more severe than the silicon devices, which imposes an important reliability issue for Ge CMOS applications |
| Starting Page | 4 |
| Ending Page | 558 |
| File Size | 390780 |
| Page Count | 555 |
| File Format | |
| ISBN | 078039268X |
| DOI | 10.1109/IEDM.2005.1609406 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2005-12-05 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Germanium MOSFET circuits Hafnium oxide Silicon Surface treatment Passivation Degradation Dielectric devices Niobium compounds Titanium compounds |
| Content Type | Text |
| Resource Type | Article |
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