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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Pethe, Abhijit Krishnamohan, Tejas Donghyun Kim Saeroonter Oh Wong, H.-S.P. Yoshio Nishi Saraswat, K.C. |
| Copyright Year | 2005 |
| Description | Author affiliation: Dept. of Electr. Eng., Stanford Univ., CA (Abhijit Pethe; Tejas Krishnamohan; Donghyun Kim; Saeroonter Oh; Wong, H.-S.P.; Yoshio Nishi; Saraswat, K.C.) |
| Abstract | The performance limits of ultra-thin body double-gated (DG) III-V channel MOSFETs are presented in this paper. An analytical ballistic model including all the valleys (Gamma-, X- and L-), was used to simulate the source to drain current. The band-to-band tunneling (BTBT) limited off currents, including both the direct and the indirect components, were simulated using TAURUStrade. Our results show that at significantly high gate fields, the current in the III-V materials is largely carried in the heavier L-valleys than the lighter Gamma-valleys, due to the low density of states (DOS) in the Gamma, similar to current conduction in Ge. Moreover, these high mobility materials like InAs, InSb and Ge suffer from excessive BTBT which seriously limits device performance. Large bandgap III-V materials like GaAs exhibit best performance due to an ideal combination of low conductivity effective electron mass and a large bandgap |
| Starting Page | 605 |
| Ending Page | 608 |
| File Size | 1065224 |
| Page Count | 4 |
| File Format | |
| ISBN | 078039268X |
| DOI | 10.1109/IEDM.2005.1609422 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2005-12-05 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | III-V semiconductor materials MOSFET circuits Conducting materials Dielectric materials Effective mass Photonic band gap Gallium arsenide Analytical models Tunneling Electrons |
| Content Type | Text |
| Resource Type | Article |
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