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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Hee-Hwan Ji Yong-Goo Kim In-Shik Han Kyung-Min Kim Jin-Suk Wang Hi-Deok Lee Won-Joon Ho Sung-Hyung Park Heui-Seung Lee Young-Seok Kang Dae-Byung Kim Chang-Young Lee Ihl-Hyun Cho Sang-Young Kim Sung-Bo Hwang Jeong-Gun Lee Jin-Won Park |
| Copyright Year | 2005 |
| Description | Author affiliation: Dept. of Electron. Eng., Chungnam Nat. Univ., Daejon (Hee-Hwan Ji; Yong-Goo Kim; In-Shik Han; Kyung-Min Kim; Jin-Suk Wang; Hi-Deok Lee) |
| Abstract | For the first time, on-chip charge pumping method is proposed to characterize ultra thin gate oxide for nano-scale CMOSFETs. Designed on-chip charge pumping system can supply 30-500MHz square-type pulse waves to DUT transistor and measured charge pumping current showed no gate tunneling current dependency which can be easily monitored in very thin gate oxide. In addition to the measurement of interface states by fixed-amplitude method, the distribution of interface states in channel region can be easily extracted by fixed-base method using this system. The proposed method is also successfully applied to analyze hot-carrier stress-induced threshold voltage $(V_{t})-degradation$ and to evaluate plasma process induced damage in terms of interface trap density |
| Starting Page | 4 |
| Ending Page | 707 |
| File Size | 754344 |
| Page Count | 704 |
| File Format | |
| ISBN | 078039268X |
| DOI | 10.1109/IEDM.2005.1609449 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2005-12-05 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | CMOS technology Charge pumps Interface states Pulse measurements Plasma measurements CMOSFETs System-on-a-chip Current measurement Charge measurement Tunneling |
| Content Type | Text |
| Resource Type | Article |
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