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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Sangmoo Choi Hyejung Choi Tae-Wook Kim Hyundeok Yang Takhee Lee Sanghun Jeon Chungwoo Kim Hyunsang Hwang |
| Copyright Year | 2005 |
| Description | Author affiliation: Dept. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol. (Sangmoo Choi; Hyejung Choi; Tae-Wook Kim; Hyundeok Yang; Takhee Lee) |
| Abstract | We report on the excellent memory properties of silicon nanocrystals (Si-NCs) embedded in SiN. Si-NCs were formed by SiH4 low-energy plasma immersion ion implantation. Compared with control $Si^{+}-implanted$ sample, additional hydrogen enhanced Si-NC density. By incorporating Si-NCs in SiN, improved program/erase efficiency, endurance and retention characteristics were observed due to the generation of additional accessible deep charge traps. Using conductive atomic force microscopy and MIS device with gate area of 100 nm, charge trapping/detrapping and multi-level charge storage of single Si-NC at room temperature were observed |
| Starting Page | 166 |
| Ending Page | 169 |
| File Size | 864656 |
| Page Count | 4 |
| File Format | |
| ISBN | 078039268X |
| DOI | 10.1109/IEDM.2005.1609296 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2005-12-05 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Nanocrystals Silicon compounds Plasma immersion ion implantation Nonvolatile memory Atomic force microscopy Materials science and technology Voltage Annealing Hydrogen MIS devices |
| Content Type | Text |
| Resource Type | Article |
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