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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Yen-Hao Shih Lee, S.C. Lue, H.T. Wu, M.D. Hsu, T.H. Lai, E.K. Hsieh, J.Y. Wu, C.W. Yang, L.W. Kuang Yeu Hsieh Chen, K.C. Liu, R. Chih-Yuan Lu |
| Copyright Year | 2005 |
| Description | Author affiliation: Emerging Central Lab., Macronix Int. Co., Ltd., Hsinchu (Yen-Hao Shih; Lee, S.C.; Lue, H.T.; Wu, M.D.; Hsu, T.H.; Lai, E.K.) |
| Abstract | For nitride trapping NVM using BTBT-HH erase, hot hole injection generates Si/BOX interface traps that cause subthreshold swing degradation. During data retention time, the annealing of interface traps causes "apparent" program-state $V_{T}$ loss, since passivation of interface traps is indistinguishable from electron loss. We report, for the first time, a method that completely stops the swing degradation. We introduce an ultra-low-hydrogen array-nitride-sealing (ANS) ONO process. This novel approach provides both a robust tunnel oxide (bottom oxide, BOX) which is resistant to hot hole degradation, and a sealed BOX/Si interface that is immune to hydrogen penetration. The new device shows excellent erase-state $V_{T}$ stability, and <500mV of program-state $V_{T}$ loss after 10K P/E cycles, leaving plenty of $DeltaV_{T}$ window for NROM/NBit 2-bit/cell operation |
| Starting Page | 551 |
| Ending Page | 554 |
| File Size | 753580 |
| Page Count | 4 |
| File Format | |
| ISBN | 078039268X |
| DOI | 10.1109/IEDM.2005.1609405 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2005-12-05 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Flash memory Electron traps Degradation Hot carriers Nonvolatile memory Annealing Passivation Robustness Hydrogen Stability |
| Content Type | Text |
| Resource Type | Article |
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