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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Whang, S.J. Lee, S.J. Fei Gao Nan Wu Zhu, C.X. Ji Sheng Pan Lei Jun Tang Kwong, D.L. |
| Copyright Year | 2002 |
| Description | Author affiliation: Silicon Nano Device Lab., Dept. of Electr. & Comput. Eng., Singapore National University, Singapore (Whang, S.J.; Lee, S.J.; Fei Gao; Nan Wu; Zhu, C.X.) |
| Abstract | Ge-MOS devices (EOT /spl sim/7.5 /spl Aring/, J/sub g/ /spl sim/ 10/sup -3/ A/cm/sup 2/) are fabricated on both n- & p-type Ge-substrates, using novel surface passivation and TaN/HfO/sub 2/ gate stack. Results show that the plasma-PH/sub 3/ treatment and thin AlN layer at HfO/sub 2//Ge interface are effective to suppress the GeO formation, which is mainly formed during HfO/sub 2/ deposition, and prevent Ge out-diffusion, resulting in improved C-V characteristics for n-MOS device with extremely low leakage. Thermal stability study of TaN/HfO/sub 2//Ge gate stack shows that low leakage with thin EOT can be obtained after post-anneal at 500 /spl deg/C and degradation is observed above 600 /spl deg/C. It is also observed that good Ge n/sup +/-p and p/sup -/-n diode characteristics are achieved by S/D activation at 500 /spl deg/C and 400/spl deg/C, respectively. Both p- & n-MOSFETs are fabricated by conventional self aligned process with maximum temperature of 500 /spl deg/C. Compared to reported Si-MOSFETs, the mobility enhancement of 1.6X for hole and 1.8X for electron is observed with Ge-MOSFETs. |
| Starting Page | 307 |
| Ending Page | 310 |
| File Size | 262554 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780386841 |
| DOI | 10.1109/IEDM.2004.1419140 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2004-12-13 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Germanium MOSFET circuits Passivation Hafnium oxide Plasma devices Surface treatment Plasma properties Capacitance-voltage characteristics Thermal stability Thermal degradation |
| Content Type | Text |
| Resource Type | Article |
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