NDLI: A study on MOSFET rectifiers maximum output voltage for RF power harvesting circuits

Content Provider	IEEE Xplore Digital Library
Author	Goncalves, H. Fernandes, J. Martins, M.
Copyright Year	2013
Description	Author affiliation: Inst. Super. Tecnico, Tech. Univ. Lisbon, Lisbon, Portugal (Goncalves, H.; Fernandes, J.; Martins, M.)
Abstract	Radio Frequency (RF) energy harvesting circuits have to harvest energy from very weak sources demanding high sensitivity and high efficiency. In this paper it is presented a study on rectifiers used in RF energy harvesting systems with MOSFET transistors operating in weak-inversion region, where both charge and discharge currents have the same order of magnitude. The study proves that the maximum output voltage of a MOSFET rectifier for very low input voltage is dependent in the first order to the relation between the signal amplitude and thermal voltage $(V_{T}).$ It is presented a method to calculate the maximum theoretical output voltage in two circuit topologies for input voltages of 10mV, 50mV and 100mV. The circuits are studied for 130nm, 90nm and 45nm CMOS technologies, proving the hypothesized theory that the maximum theoretical output voltage is not a function of the normal transistor parameters (i.e. $V_{t0},$ W/L) but instead, the relation between the input voltage amplitude and $V_{T}.$
Starting Page	2964
Ending Page	2967
File Size	572847
Page Count	4
File Format	PDF
ISBN	9781467357609
ISSN	02714302
e-ISBN	9781467357623
DOI	10.1109/ISCAS.2013.6572501
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-05-19
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFET Radio frequency Capacitors Logic gates Energy harvesting CMOS integrated circuits
Content Type	Text
Resource Type	Article

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