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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Njuguna, R. Gruev, V. |
| Copyright Year | 2013 |
| Description | Author affiliation: Dept. of Comput. Sci. & Eng., Washington Univ. in St. Louis, St. Louis, MO, USA (Njuguna, R.; Gruev, V.) |
| Abstract | A current-mode CMOS imaging sensor is presented in this paper. The read-out transistor in the photo pixel operates in velocity saturation regime and allows for high linearity between integrated photo charges and output drain current. The column parallel read-out circuitry implements a novel current conveyor with a feedback mechanism which improves matching of the output currents across the imaging array. Correlated double sampling (CDS) is performed on-chip in order to improve noise characteristics of the imager. A prototype of the proposed imaging sensor was fabricated in 0.18μm triple well CMOS process. The sensor operation and measurements are presented. |
| Starting Page | 2630 |
| Ending Page | 2633 |
| File Size | 1685369 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781467357609 |
| ISSN | 02714302 |
| e-ISBN | 9781467357623 |
| DOI | 10.1109/ISCAS.2013.6572418 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2013-05-19 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Transistors Imaging Arrays Linearity Electric potential Noise CMOS integrated circuits |
| Content Type | Text |
| Resource Type | Article |
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