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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Michikami, O. Wakana, H. Hashimoto, T. |
| Copyright Year | 2002 |
| Abstract | Activated oxygen plasma (AOP) annealing has been proposed as a recovery treatment in a decompressed oxygen atmosphere. As-sputtered EuBa/sub 2/Cu/sub 3/O/sub 7/ (EBCO) thin films with a T/sub c/ endpoint (T/sub ce/) of 90 K were used for deterioration and recovery treatments. The removal and recovery for oxygen atoms was clarified from in-situ measurements of electrical resistance (R). The AOP annealing had a better recovery effect than pure oxygen annealing. AOP recovery conditions of annealing temperature (T/sub sa/) of 450-700/spl deg/C, plasma exposure and annealing time (t/sub p/) Of more than 40 min, and oxygen pressure (P/sub O2/spl caron/(pc)/) of more than 200 Pa were found to be appropriate. The AOP diffused around to the back side of a shutter, even one of 15 cm in radius, and diffused to a gap distance of 0.1 cm between the film and the shutter, restoring the degraded films to the high-quality characteristics. |
| Sponsorship | Council on Superconductivity Appl. Superconductivity Conference Inc MIT |
| Starting Page | 3197 |
| Ending Page | 3200 |
| Page Count | 4 |
| File Size | 423540 |
| File Format | |
| ISSN | 10518223 |
| Volume Number | 11 |
| Issue Number | 1 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2001-03-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Sputtering Annealing Atomic measurements Plasma measurements Plasma temperature Atmosphere Electrical resistance measurement Electric variables measurement Electric resistance Degradation |
| Content Type | Text |
| Resource Type | Article |
| Subject | Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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