NDLI: Numerical simulation and parametric assessment of GaN buffered trench gate MOSFET for low power applications

Content Provider	IET Digital Library
Author	Tripathi, Pranav M. Soni, Harshit Chaujar, Rishu Kumar, Ajay
Abstract	This study presents numerical simulation of a novel gallium nitride buffered trench gate (GaN-BTG) metal oxide semiconductor field effect transistor (MOSFET) for high-speed and low-power applications. The electrical characteristics of GaN-BTG-MOSFET are compared with BTG MOSFET and conventional trench gate MOSFET. A comparative study of different performance factors such as electric field, electron velocity, threshold voltage (V th), electron mobility, and sub-threshold swing (SS) of these devices has been performed. Results reveal a 43.85% improvement in SS and 9.83% decrement in V th for GaN-BTG-MOSFET. Furthermore, the frequency analysis has been performed in terms of scattering (S) parameters, cut-off frequency (f T) and maximum oscillator frequency (f MAX) to show how the device is also suitable for radio frequency applications. Furthermore, the study of parametric variation of GaN-BTG-MOSFET with the change in channel length, oxide thickness (t ox), and doping concentration has also been presented. Results show that GaN-BTG-MOSFET can act as a promising structure for further scaling down of the trenched MOSFET and assures better performance for sub-20 nm trenched MOSFET.
Starting Page	915
Ending Page	922
Page Count	8
ISSN	1751858X
Volume Number	14
e-ISSN	17518598
Issue Number	Issue 6, Sep (2020)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/iet-cds/14/6
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/iet-cds.2020.0041
Journal	IET Circuits, Devices & Systems
Publisher Date	2020-04-20
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	BTG MOSFET Channel Length Conventional Trench Gate MOSFET Cut-off Frequency Design And Testing Doping Concentration Electric Field Electron Mobility Electron Velocity Equivalent Circuit Frequency Analysis Gallium Compound Gallium Nitride Buffered Trench Gate Metal Oxide Semiconductor Field Effect Transistor GaN III-V SemiConductor Insulated Gate Field Effect Transistors Low Power Application Low Power Electronics Low-power Application Maximum Oscillator Frequency MOSFET Numerical Analysis Numerical Simulation Oxide Thickness Parametric Assessment Parametric Variation S Parameter Scattering Parameter Semiconductor Device Model Semiconductor Device Modelling Semiconductor Doping Sub-threshold Swing Threshold Voltage Trenched MOSFET Wide Band Gap SemiConductor
Content Type	Text
Resource Type	Article
Subject	Control and Systems Engineering Electrical and Electronic Engineering

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