NDLI: Performance improvement of timing and power variations due to random dopant fluctuation in negative-capacitance CMOS inverters

Content Provider	IET Digital Library
Author	Zhang, Kai Lü, Weifeng Si, Peng Zhao, Zhifeng Yu, Tianyu
Abstract	In this study, we compared the timing and its random dopant fluctuation (RDF)-induced variations in nanometre conventional and negative-capacitance CMOS (NC-CMOS) inverters. The authors found that the transition delay in the NC-CMOS inverter exhibits a strongly dependence on the viscosity coefficient (ρ) of the ferroelectric (FE). Only NC-CMOS using sufficiently low ρ with smaller response time to baseline CMOS can be considered as a low-power device with a smaller propagation delay. Due to the steeper transient subthreshold swing and lower threshold voltage (V th), the timing parameters, e.g. rise time, fall time, high-to-low transition, low-to-high transition, and propagation delay were all reduced. Furthermore, RDF-induced timing variations can be effectively suppressed by the negative capacitance effect provided by the FE capacitor and the fluctuation of static DC power also drops, and this immunity to RDF-induced timing variations increases with increasing FE thickness (T FE). Our analysis was verified by technology-aided design simulation and can provide useful insights into future studies of low-power CMOS digital circuits.
Starting Page	908
Ending Page	914
Page Count	7
ISSN	1751858X
Volume Number	14
e-ISSN	17518598
Issue Number	Issue 6, Sep (2020)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/iet-cds/14/6
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/iet-cds.2020.0101
Journal	IET Circuits, Devices & Systems
Publisher Date	2020-07-22
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Baseline CMOS CMOS Digital Integrated Circuit CMOS Integrated Circuit Digital Circuit Design, Modelling And Testing Electrical/electronic Equipment Energy Utilisation FE Thickness High-to-low Transition Invertors Low Power Electronics Low-power CMOS Digital Circuit Low-power Device Low-to-high Transition NC-CMOS Inverter Negative Capacitance Effect Negative-capacitance CMOS Inverter Performance Improvement Power Electronics Power Integrated Circuit Power Supply Power Variations Propagation Delay Random Dopant Fluctuation-induced Variations RDF-induced Timing Variations Static DC Power Steeper Transient Subthreshold Swing Supervisory Circuit Technology-aided Design Simulation Threshold Voltage Timing Parameter Transition Delay Viscosity Coefficient
Content Type	Text
Resource Type	Article
Subject	Control and Systems Engineering Electrical and Electronic Engineering

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