NDLI: RF performance reliability of power N-LDMOS under pulsed-RF aging life test in radar application S-band

Content Provider	IET Digital Library
Author	Belaïd, Mohamed Ali Almusallam, Ahmed Masmoudi, Mohamed
Abstract	This study presents firstly, experimental results through an innovative reliability bench of pulsed RF life test in a radar application for device lifetime under pulse conditions, then the physical clarifications of the failure phenomenon. The results of accelerated aging stress relative to various temperatures (3000 h at 150 and 10°C) are presented. Based on the radio-frequency (RF) behaviour parameters shifts (gain, P out, drain efficiency: DE, and P sat), the reliability of different tests have been compared. To explain and confirm these effects according to the degradation data, the dominant physical phonemes involved have been studied and the failure modes of the metal-oxide-semiconductor field-effect transistors have been examined and proved with the SILVACO-ATLAS simulator. What supports finding a relationship between the shifts of RF electrical parameters to failure physical phenomena caused by impact ionisation. The behaviour degradation of N-LDMOS is related to interface states generated by hot carriers (traps) and by the electrons that are trapped, which leads to an accumulation of negative charge at the Si/SiO2 interface. At low temperature, the interface states are created more, due to a maximum impact ionisation rate targeted in the gate edge area. Finally, RF behaviour reliability analysis has been discussed.
Starting Page	805
Ending Page	810
Page Count	6
ISSN	1751858X
Volume Number	14
e-ISSN	17518598
Issue Number	Issue 6, Sep (2020)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/iet-cds/14/6
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/iet-cds.2019.0552
Journal	IET Circuits, Devices & Systems
Publisher Date	2020-04-20
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Accelerated Aging Stress Ageing Behaviour Degradation Cryogenic Electronics Degradation Data Design And Testing Device Lifetime Dominant Physical Phonemes Electron Traps Elemental Semiconductor Equivalent Circuit Failure Analysis Failure Mode Failure Phenomenon Failure Physical Phenomena Gate Edge Area Hot Carriers Impact Ionisation Innovative Reliability Bench Insulated Gate Field Effect Transistors Interface State Life Testing Metal-oxide-semiconductor Field-effect Transistors Microwave Field Effect Transistors Physical Clarifications Power MOSFET Power N-LDMOS Power Semiconductor Device Pulse Condition Pulsed RF Life Test Pulsed-RF Aging Life Test Radar Radar Application Radar Equipment Radio-frequency Behaviour Parameter Shift Reliability RF Behaviour Reliability Analysis RF Electrical Parameter RF Performance Reliability S Band Semiconductor Device Model Semiconductor Device Modelling Semiconductor Device Reliability Semiconductor Device Testing Si-SiO2 Silicon Silicon Compound SILVACO-ATLAS Simulator Solid State Microwave Circuit And Device System And Application Temperature 10.0 DegC Temperature 150.0 DegC Time 3000.0 Hour UHF Field Effect Transistors
Content Type	Text
Resource Type	Article
Subject	Control and Systems Engineering Electrical and Electronic Engineering

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