NDLI: Investigation of SiC trench MOSFET with floating islands

Content Provider	IET Digital Library
Author	Qingwen, Song Xiaoyan, Tang Yimeng, Zhang Yuming, Zhang Yimen, Zhang
Abstract	The silicon carbide trench metal-oxide-semiconductor field-effect transistors (SiC UMOSFET) with P + floating island (FLI) which shields the gate oxide at the bottom of the gate trench from the high electric field during the blocking state and enhances the breakdown voltage (BV), is presented in this study using two-dimensional simulations. The effects of doping concentration, length and position of FLI on BV, electric field distribution and specific on-resistance (R on,sp) are studied, thereby providing particularly useful guidelines for the design of this new type of device when considering the breakdown of the gate oxide layer. For the suitable device design, the results indicate that BV and Baliga figure of merit are, respectively, increased by 150 and 439% compared with a conventional SiC UMOSFET. At the same time, the SiC FLI UMOSFET has smaller gate-drain capacitance and better switching performance compared with the conventional UMOSFET on the condition of the same drift layer parameters. FLI introduced have almost no influence on the recovery characteristics of body diode.
Starting Page	2492
Ending Page	2499
Page Count	8
ISSN	17554535
Volume Number	9
e-ISSN	17554543
Issue Number	Issue 13, Oct (2016)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/iet-pel/9/13
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/iet-pel.2015.0600
Journal	IET Power Electronics
Publisher Date	2016-10-26
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Baliga Figure of Merit Blocking State Breakdown Voltage Enhancement BV Breakdown Enhancement Design And Testing Doping Concentration Effects Doping Profiles Drift Layer Parameter Electric Field Electric Field Distribution Equivalent Circuit FLI Gate Oxide Layer Gate Trench Gate-drain Capacitance Insulated Gate Field Effect Transistors Length Effect Metal-oxide-semiconductor Field-effect Transistors MOSFET P+ Floating Island Position Effect Semiconductor Device Breakdown Semiconductor Device Model Semiconductor Device Modelling SiC Silicon Carbide Trench MOSFET Silicon Compound Specific On-resistance Switching Performance Two-dimensional Simulations UMOSFET Wide Band Gap SemiConductor
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

SiC trench MOSFET with heterojunction diode for low switching loss and high short-circuit capability

Integratable trench MOSFET with ultra-low specific on-resistance

Way of operation to improve performance for advanced split-gate resurf stepped oxide UMOSFET

Method to improve trade-off performance for split-gate power U-shape metal-oxide semiconductor field-effect transistor with compound trench dielectrics

An Optimized Structure of 4H-SiC U-Shaped Trench Gate MOSFET

Design of a gate driver for SiC MOSFET module for applications up to 1200 V

SiC technologies for future energy electronics

Si/SiC heterojunction lateral double-diffused metal oxide semiconductor field effect transistor with breakdown point transfer (BPT) terminal technology

Novel SiC-trench-MOSFET with reduced oxide electric field

Investigation of SiC trench MOSFET with floating islands

Similar Documents

SiC trench MOSFET with heterojunction diode for low switching loss and high short-circuit capability

Integratable trench MOSFET with ultra-low specific on-resistance

Way of operation to improve performance for advanced split-gate resurf stepped oxide UMOSFET

Method to improve trade-off performance for split-gate power U-shape metal-oxide semiconductor field-effect transistor with compound trench dielectrics

An Optimized Structure of 4H-SiC U-Shaped Trench Gate MOSFET

Design of a gate driver for SiC MOSFET module for applications up to 1200 V

SiC technologies for future energy electronics

Si/SiC heterojunction lateral double-diffused metal oxide semiconductor field effect transistor with breakdown point transfer (BPT) terminal technology

Novel SiC-trench-MOSFET with reduced oxide electric field

Investigation of SiC trench MOSFET with floating islands