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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Koganemaru, M. Ikeda, T. Komori, M. Miyazaki, N. Tomokage, H. |
| Copyright Year | 2008 |
| Description | Author affiliation: Dept. of Electron. Eng. & Comput. Sci., Fukuoka Univ., Fukuoka (Tomokage, H.) || Dept. of Mech. Eng. & Sci., Kyoto Univ., Kyoto (Ikeda, T.; Komori, M.; Miyazaki, N.) || Fukuoka Ind. Technol. Center, Mech. & Electron. Res. Inst., Kitakyushu (Koganemaru, M.) |
| Abstract | We evaluated the stress-induced effect on electronic characteristics of nMOSFETs using mechanical stress simulation and drift-diffusion device simulation. The simulation model includes the electron mobility model that takes the stress effects into consideration. We evaluated the variation in the electronic characteristics of nMOSFET during the actual resin-molding packaging process (QFP process). The stress distribution in the nMOSFET was considered in the device simulation. As a result, the experimental results were evaluated reasonably using the proposed simulation method. It is demonstrated that the device simulation is useful and versatile for evaluating the stress-induced effect on electronic characteristics of a semiconductor device. |
| Starting Page | 839 |
| Ending Page | 844 |
| File Size | 5271412 |
| Page Count | 6 |
| File Format | |
| ISBN | 9781424428137 |
| DOI | 10.1109/ESTC.2008.4684461 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2008-09-01 |
| Publisher Place | UK |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Industrial electronics Computer simulation Computational modeling Semiconductor devices Electron mobility Silicon Residual stresses MOSFETs Semiconductor device packaging Electronics packaging |
| Content Type | Text |
| Resource Type | Article |
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