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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Iura, S. Donlon, J.F. Thal, E. |
| Copyright Year | 2007 |
| Description | Author affiliation: MITSUBISHI Electr., Fukuoka (Iura, S.) |
| Abstract | High voltage IGBT (HVIGBT) modules with high performance in the areas of low power loss and high reliability are required for high power applications such as traction, large industrial motor drives, and medium voltage converters. Unfortunately, these performances are often in reciprocal relationship. In order to achieve a higher performance with optimized tradeoffs at the 3.3 kV level, a new IGBT and free wheeling diode (FWD) chip set was developed. This paper describes the optimization of the chip design using several simulation tools and Taguchi method experiments to find the most influential design factors and to secure the most robust design. |
| Starting Page | 1 |
| Ending Page | 8 |
| File Size | 260267 |
| Page Count | 8 |
| File Format | |
| ISBN | 9789275815108 |
| DOI | 10.1109/EPE.2007.4417346 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2007-09-02 |
| Publisher Place | Denmark |
| Access Restriction | Subscribed |
| Rights Holder | EPE Association |
| Subject Keyword | Insulated gate bipolar transistors Short circuit currents Power semiconductor device Europe Semiconductor diodes Chip scale packaging Free wheel diode (FWD) Semiconductor optical amplifiers Uniform resource locators Design IGBT Voltage Device characterisation Robustness Performance loss |
| Content Type | Text |
| Resource Type | Article |
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