NDLI: Regenerative turn-off power devices

Content Provider	IEEE Xplore Digital Library
Author	Vemulapati, U.R. Rosensaft, B. Silber, D.
Copyright Year	2007
Description	Author affiliation: Univ. of Bremen, Bremen (Vemulapati, U.R.; Rosensaft, B.; Silber, D.)
Abstract	We describe the operation and application of a new class of power devices which have regenerative turn-off capability. The presented regenerative turn-off devices are (1) circuit breaker (2) safe controlled power switch and (3) regenerative diode. Regenerative turn-off devices are conceptually "dual" to regenerative turn-on devices like the Shockley diodes or thyristor type devices. Regenerative turn-off devices are normally ON and enable current flow until a certain current/voltage level above which the regenerative turn-off action starts. Therefore, they can be developed as circuit breakers, safe controlled power switches and regenerative diodes. Regenerative diodes are "normally open" and block at small reverse current/voltage levels (Vemulapati, 2007). Regenerative turn-off devices can be realized from a series connection of normally ON type JFETs which are connected as controlled source ballasts. Full gate controlled device (safe controlled power switch) can be obtained with the addition of MOS gates to the circuit breaker. High injection (thyristor) versions of the circuit breaker and safe controlled power switch can be developed and they exhibit good plasma concentration which is comparable to that of the advanced IGBTs (Rosensaft, 2007). Regenerative diode can also be developed from the basic structure of a Dual Thyristor which has a low or neglectable threshold voltage and closes at reverse polarity. Regenerative diode is superior compared to Schottky diodes and junction barrier controlled Schottky (JBS) rectifier both in forward and reverse directions (Vemulapati, 2007), but of course, requires a more complicated technology. JBS rectifiers are obtained with a good compromise between p-n and Schottky diodes (Baliga, 1998). Though regenerative diode has inferior on-state behavior when compared to that of the synchronous rectifier, it does not require any external triggering.
Starting Page	1
Ending Page	8
File Size	510750
Page Count	8
File Format	PDF
ISBN	9789275815108
DOI	10.1109/EPE.2007.4417677
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-09-02
Publisher Place	Denmark
Access Restriction	Subscribed
Rights Holder	EPE Association
Subject Keyword	Insulated gate bipolar transistors Schottky diodes Thyristors Electronic ballasts regenerative diode circuit breaker safe controlled power switch Plasma devices Plasma sources regenerative turn-off JBS rectifier Circuit breakers Rectifiers Voltage JFETs
Content Type	Text
Resource Type	Article

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