NDLI: New 1700V SPT+ IGBT and diode chip set with 175°C operating junction temperature

Content Provider	IEEE Xplore Digital Library
Author	Corvasce, C. Kopta, A. Vobecky, J. Rahimo, M. Geissmann, S. Schnell, R.
Copyright Year	2011
Description	Author affiliation: ABB Switzerland Ltd, Semiconductors, Fabrikstrasse 3, CH - 5600 Lenzburg, Switzerland (Corvasce, C.; Kopta, A.; Vobecky, J.; Rahimo, M.; Geissmann, S.; Schnell, R.)
Abstract	In this paper we present a newly developed 1700V IGBT and diode chip set generation with optimized performances for 175°C junction temperature operations. The planar 1700V IGBT (SPT+) cell has been improved by exploiting the full potential of the N-enhancement layer with the consequent reduction of the conduction losses. In addition a substantial leakage current reduction has been achieved by designing a novel termination based on the biased ring concept. A new diode has been developed which uses the Field Shielded Anode (FSA) concept to enable a reduction of the high temperature leakage current by a factor of 3 when compared with the previous diode platform. This paper will illustrate the most important design features and based on measurement data discuss the chip set performances for low to medium inductance applications.
Starting Page	1
Ending Page	10
File Size	1018105
Page Count	10
File Format	PDF
ISBN	9781612841670
e-ISBN	9789075815146
e-ISBN	9789075815153
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-08-30
Publisher Place	United Kingdom
Access Restriction	Subscribed
Rights Holder	EPE ASSOCIATION
Subject Keyword	Insulated gate bipolar transistors Junction Termination Semiconductor diodes Free wheel diode (FWD) Device Characterization Design High Temperature Inductance IGBT Leakage current Junctions Anodes Electric fields
Content Type	Text
Resource Type	Article

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