NDLI: Analysis of the base current and saturation voltage in 4H-SiC power BJTs

Content Provider	IEEE Xplore Digital Library
Author	Domeij, M. Hyung-Seok Lee Zetterling, C.-M. Ostling, M.
Copyright Year	2007
Description	Author affiliation: KTH - R. Inst. of Technol., Stockholm (Domeij, M.; Hyung-Seok Lee; Zetterling, C.-M.; Ostling, M.)
Abstract	Silicon carbide (SiC) power bipolar junction transistors are interesting competitors to Si IGBTs for 1200 V power electronics applications. Advantages of SiC BJTs are low collector-emitter saturation voltages, little stored charge and high temperature capability. In this work, SiC NPN power BJTs with common emitter current gains of 40 have been fabricated and characterized. Electrical measurements for BJTs with different emitter widths indicate that the current gain is limited by surface recombination. A low value of $V_{CESAT}=0.9$ V at $J_{c}=100$ $A/cm^{2}$ was obtained for small and large area (3.4 $mm^{2})$ BJTs and correlated with the formation of low-resistive ohmic contacts to the base. Large area BJTs were shown to operate with a current gain of 48 in pulsed mode at a collector current of 12 A corresponding to $J_{c}=360$ $A/cm^{2}.$
Starting Page	1
Ending Page	7
File Size	416575
Page Count	7
File Format	PDF
ISBN	9789275815108
DOI	10.1109/EPE.2007.4417568
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-09-02
Publisher Place	Denmark
Access Restriction	Subscribed
Rights Holder	EPE Association
Subject Keyword	Insulated gate bipolar transistors Temperature Neodymium device modelling Power electronics Silicon carbide Current measurement Electric variables measurement Voltage bipolar device Gain measurement Epitaxial growth transistor
Content Type	Text
Resource Type	Article

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