NDLI: Performance of 3D capacitors integrated on silicon for DC-DC converter applications

Content Provider	IEEE Xplore Digital Library
Author	Benazzi, A. Brunet, M. Dubreuil, P. Mauran, N. Bary, L. Laur, J.-P. Sanchez, J.-L. Isoird, K.
Copyright Year	2007
Description	Author affiliation: Univ. of Toulouse, Toulouse (Benazzi, A.; Brunet, M.; Dubreuil, P.; Mauran, N.; Bary, L.; Laur, J.-P.; Sanchez, J.-L.; Isoird, K.)
Abstract	The integration of passive components on silicon for future DC-DC converters applications is still a challenging area of research. This paper focuses on integrated 3D capacitors with high capacitance density fabricated with microfabrication techniques on silicon and in particular DRIE. The fabricated prototypes were characterised: a capacitance density between 29 and 46 $nF/mm^{2}$ was demonstrated up to 800 kHz. An improvement is presented on the equivalent series resistance (ESR), which impedes currently on the component utilisation at higher frequencies.
Starting Page	1
Ending Page	9
File Size	337809
Page Count	9
File Format	PDF
ISBN	9789275815108
DOI	10.1109/EPE.2007.4417614
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-09-02
Publisher Place	Denmark
Access Restriction	Subscribed
Rights Holder	EPE Association
Subject Keyword	Deep Reactive Ion Etching Paramagnetic resonance Passive filters trench Capacitors DC-DC power converter DC-DC power converters Etching Schottky contact phosphorus diffusion Prototypes Capacitance Frequency Silicon Impedance integrated capacitor
Content Type	Text
Resource Type	Article

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Performance of 3D capacitors integrated on silicon for DC-DC converter applications