NDLI: Thermo-mechanical analysis of GaAs devices under temperature-humidity-bias testing

Content Provider	IEEE Xplore Digital Library
Author	Adokanou, K. Inal, K. Montmitonnet, P. Courtade, F. Bonnet, B.
Copyright Year	2015
Description	Author affiliation: Thales Alenia Space, Toulouse, France (Bonnet, B.) \|\| CEMEF MINES Paristech, PSL Univ., Sophia Antipolis, France (Adokanou, K.; Inal, K.; Montmitonnet, P.) \|\| Centre Nat. d'Etudes Spatiales, Toulouse, France (Courtade, F.)
Abstract	Accelerated life tests on microelectronic devices are needed to estimate their degradation under severe environment. THB (Temperature Humidity Bias) [1] at 85°C and 85%RH (relative humidity) is commonly used for reliability studies. Empirical acceleration laws, used for THB test take into account the temperature change (from 22°C to 85°C), but they do not quantify its impact of the corresponding thermo-elastic stress which it adds to the residual stress in the die and of possible microstructure changes. The aim of this work is to determine the thermo-mechanical stresses induced in the active layer of a Gallium Arsenide (GaAs) chip by the THB test. They are due to the mismatch in Coefficients of Thermal Expansion (CTE) between the stack of thin film materials used as metallurgic interconnection and the intermediate dielectric layers above the active area of the chip. To estimate this stress, fist layers thicknesses measurement have been made with various techniques; second few configurations have been used to simulate heating and finally “complete” 2D Finite Element Analysis (FEA) has been performed. Elastic and thermo-physical materials data come from the literature. The results indicate compression of metal gate (Ti/Al/Au) and tensile stress concentration in the $SiN_{x}$ passivation layer. The outcomes is compared with THB test results from [2] and suggests that stress induced by heating must be considered to explain failure during THB test.
Sponsorship	IEEE Electron Devices Soc.
Starting Page	1
Ending Page	8
File Size	2143388
Page Count	8
File Format	PDF
e-ISBN	9781479999507
DOI	10.1109/EuroSimE.2015.7103140
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-04-19
Publisher Place	Hungary
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Finite element analysis Gallium arsenide Heating Thermal analysis Thermal expansion Stress Biological system modeling
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
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