NDLI: Experimental confirmation of electron fluence driven, Cu catalyzed interface breakdown model for low-k TDDB

Content Provider	IEEE Xplore Digital Library
Author	Fen Chen Gambino, J. Shinosky, M. Aitken, J. Huang, E. Cohen, S. Yang, C. Edelstein, D. Yun Wang Kane, T. Kioussis, D.
Copyright Year	2012
Description	Author affiliation: IBM Microelectronics, Essex Junction, VT 05452, USA (Fen Chen; Gambino, J.; Shinosky, M.; Aitken, J.) \|\| IBM Microelectronics, Hopewell Junction, NY 12533, USA (Yun Wang; Kane, T.) \|\| IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598, USA (Huang, E.; Cohen, S.; Yang, C.; Edelstein, D.) \|\| GLOBALFOUNDRIES, Inc, Hopewell Junction, NY 12533, USA (Kioussis, D.)
Abstract	During technology development, the study of low-k TDDB is important for assuring robust chip reliability. It has been proposed that the fundamentals of low-k TDDB are closely correlated with the leakage conduction mechanism of low-k dielectrics. In addition, low-k breakdown could also be catalyzed by Cu migration occurring mostly at the interface between capping layer and low-k dielectrics. In this study, we conducted several important experiments including leakage modulation by changing the capping layer without changing the electric field, TDDB modulation by liner-free interconnect build, 3D on-flight stress-induced leakage current (SILC) measurement, triangular voltage sweep (TVS) versus TDDB, and Cu-free interconnect build at 32nm to experimentally confirm the proposed electron fluence driven, Cu catalyzed interface low-k breakdown model.
File Size	815874
File Format	PDF
ISBN	9781457716782
ISSN	19381891
e-ISBN	9781457716805
e-ISBN	9781457716799
DOI	10.1109/IRPS.2012.6241802
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-04-15
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electric breakdown Dielectrics Voltage measurement Stress Acceleration Dielectric measurements Breakdown voltage leakage low-k TDDB low-k reliability Capping layer liner free Cu free Cu diffusion TVS interface
Content Type	Text
Resource Type	Article

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