NDLI: A novel degradation mechanism in SiCr-O based thin film resistors under temperature and current stress

Content Provider	IEEE Xplore Digital Library
Author	Yuan Li Huiskamp, P.
Copyright Year	2012
Description	Author affiliation: NXP Semiconductors, Gerstweg 2, 6534 AE Nijmegen, The Netherlands (Yuan Li; Huiskamp, P.)
Abstract	The degradation mechanism during current and temperature stress of SiCr-O thin film resistors in integrated circuits is investigated closely by experiments with the use of various characterization techniques. It is found that the degradation in SiCr-O resistors is dominated by the migration of Si in the resistor from the anode electrode to the cathode electrode. The direction of material migration is contrary to EM process in metal interconnect lines. It is shown that only excess Si in the SiCr-O resistive film besides a stable phase of the material migrates while the material of the stable phase does not migrate nor degrade during further stress, which explains why voiding is never observed at the anode electrode of the resistor. The new understanding on the degradation mechanism points to a way to eliminate the degradation process in SiCr-O based devices (resistors or heating elements) by optimization of the material composition. In addition, the degradation is found to be strongly dependent on the length of the resistor - the shorter the resistor, the faster the drift of the resistance value in percentage, which is in contrast to the well-known Blech effect of EM process in metal lines. Such a length dependency of degradation rate suggests that the driving force for the migration process in SiCr-O is much stronger than for EM in metal lines.
File Size	924700
File Format	PDF
ISBN	9781457716782
ISSN	19381891
e-ISBN	9781457716805
e-ISBN	9781457716799
DOI	10.1109/IRPS.2012.6241898
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-04-15
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Resistors Degradation Silicon Electrodes Stress Films length dependency SiCr-O resistor degradation mechanism Si migration
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Assessing the degradation mechanisms and current limitation design rules of SiCr-based thin-film resistors in integrated circuits

Constant-Current Stressing of SiCr-Based Thin Film Resistors: Initial "Wearout" Investigation

Physical Degradation Characterization of Thin Film Resistors

A 2500 Ω/□ tantalum thin film resistor for silicon integrated circuits

Degradation Of Silicon Dioxide Film Under High Electric Field Stress

Process Optimization of Integrated SiCr Thin-Film Resistor for High-Performance Analog Circuits

Thin-film NTC resistor based on SrNb/sub x/Ti/sub 1-x/O/sub 3/

Stability of a-Si thin film transistors under negative gate bias stress

IMD stack thermal resistance effects on SiCr Thin Film Resistor's current density performance

A novel degradation mechanism in SiCr-O based thin film resistors under temperature and current stress

Similar Documents

Assessing the degradation mechanisms and current limitation design rules of SiCr-based thin-film resistors in integrated circuits

Constant-Current Stressing of SiCr-Based Thin Film Resistors: Initial "Wearout" Investigation

Physical Degradation Characterization of Thin Film Resistors

A 2500 &#937;/&#9633; tantalum thin film resistor for silicon integrated circuits

Degradation Of Silicon Dioxide Film Under High Electric Field Stress

Process Optimization of Integrated SiCr Thin-Film Resistor for High-Performance Analog Circuits

Thin-film NTC resistor based on SrNb/sub x/Ti/sub 1-x/O/sub 3/

Stability of a-Si thin film transistors under negative gate bias stress

IMD stack thermal resistance effects on SiCr Thin Film Resistor's current density performance

A novel degradation mechanism in SiCr-O based thin film resistors under temperature and current stress

A 2500 Ω/□ tantalum thin film resistor for silicon integrated circuits