NDLI: Analysis and prediction of stability in commercial, 1200 V, 33A, 4H-SiC MOSFETs

Content Provider	IEEE Xplore Digital Library
Author	DasGupta, S. Kaplar, R.J. Marinella, M.J. Smith, M.A. Atcitty, S.
Copyright Year	2012
Description	Author affiliation: Sandia National Laboratories, Albuquerque, NM 87111, USA (DasGupta, S.; Kaplar, R.J.; Marinella, M.J.; Smith, M.A.; Atcitty, S.)
Abstract	State-of-the-art, commercially available, 4H-SiC MOSFETs are evaluated for stability under high-temperature over-voltage and pulsed over-current conditions. The devices show maximum vulnerability under high-temperature accumulation stress, demonstrating that the gate oxide is more prone to hole trapping than to electron trapping. The power MOSFET architecture coupled with a high interface trap density enables us to predict the stability of the device through a simple evaluation of the free-wheeling diode ideality factor (η) of the unstressed device. The pulsed over-current operation results in degradation similar to electron trapping at high temperature, presumably due to overheating of the device beyond its specified junction temperature. Over-current degradation is more severe at high switching frequency.
File Size	396804
File Format	PDF
ISBN	9781457716782
ISSN	19381891
e-ISBN	9781457716805
e-ISBN	9781457716799
DOI	10.1109/IRPS.2012.6241817
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-04-15
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Charge carrier processes Degradation MOSFETs Silicon carbide Stress Logic gates Semiconductor diodes Hole Trapping Silicon Carbide Power MOSFET Free-Wheeling Diode
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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