NDLI: The effect of voltage bias stress on temperature-dependent conduction properties of low-k dielectrics

Content Provider	IEEE Xplore Digital Library
Author	Atkin, J.M. Shaw, T.M. Liniger, E. Laibowitz, R.B. Heinz, T.F.
Copyright Year	2012
Description	Author affiliation: Departments of Physics and Electrical Engineering, Columbia University, New York, USA (Atkin, J.M.; Laibowitz, R.B.; Heinz, T.F.) \|\| IBM Thomas J. Watson Research Center, Yorktown Heights NY, USA (Shaw, T.M.; Liniger, E.)
Abstract	The change in leakage current in porous low-k interconnect dielectrics (LKDs) arising from time-dependent dielectric breakdown (TDDB) has been investigated. Using periodic measurements of temperature-dependent IV curves and photocurrent decay during voltage bias stress the apparent change in trap density and conduction mechanism in LKDs are investigated. A substantial change in the temperature-dependence of the current is observed, suggesting a move from a thermally excited conduction process to a tunnel-like or percolative process. This change is correlated with a large increase in trap density after long-term bias stress, consistent with a trap to trap tunneling interpretation. However, throughout the high-voltage bias stress, the leakage current continues to obey a √E field dependence.
File Size	284942
File Format	PDF
ISBN	9781457716782
ISSN	19381891
e-ISBN	9781457716805
e-ISBN	9781457716799
DOI	10.1109/IRPS.2012.6241875
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-04-15
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Stress Temperature measurement Dielectrics Current measurement Leakage current Photoconductivity Electron traps breakdown low-k reliability
Content Type	Text
Resource Type	Article

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