NDLI: Characteristics and analysis of a-Si:H color-sensitive photodetectors

Content Provider	IEEE Xplore Digital Library
Author	Jyh-Wong Hong Nerng-Fu Shin Yean-Fen Wu Tean-Sen Jen Chun-Yen Chang
Copyright Year	1991
Description	Author affiliation: Dept. of Electr. Eng., Nat. Central Univ., Chungli, Taiwan (Jyh-Wong Hong; Nerng-Fu Shin; Yean-Fen Wu; Tean-Sen Jen)
Abstract	A novel a-Si:H photodetector has been demonstrated. The advantages of this photodetector include a voltage-adjustable sensitive-wavelength range, which has been confirmed by simulation results, and a lower sub-peak spectral response. The performances of the successfully fabricated a-Si:H color-sensitive photodetectors, processing a minimum FWHM (full width at half maximum) of 600 AA in its spectral responses and with the basic structure of Al/n/sup +/-i-p/sup +/-i-n-i-p-i-n/sup +//ITO(indium tin oxide)/glass, have been quantitatively fitted by the theoretical analysis. The simple model presented can be used to explain the color-sensitive features observed experimentally for the proposed photodetectors.
Starting Page	279
Ending Page	281
File Size	215231
Page Count	3
File Format	PDF
ISBN	0879425857
DOI	10.1109/SENSOR.1991.148861
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1991-06-24
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photodetectors Charge carrier processes Glass Indium tin oxide Voltage Fabrication Cleaning Plasma chemistry Plasma devices Chemicals
Content Type	Text
Resource Type	Article

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