NDLI: Stress in undoped LPCVD polycrystalline silicon

Content Provider	IEEE Xplore Digital Library
Author	Krulevitch, K. Howe, R.T. Johnson, G.C. Huang, J.
Copyright Year	1991
Description	Author affiliation: California Univ., Berkeley, CA, USA (Krulevitch, K.; Howe, R.T.; Johnson, G.C.; Huang, J.)
Abstract	The effect of processing conditions on stress in undoped LPCVD polycrystalline silicon films was investigated. Films were deposited at temperatures between 605 and 700 degrees C and pressures from 300 to 550 mtorr, with varying silane flow rate and deposition time. Low temperatures produced tensile films, while temperatures greater than about 620 degrees C resulted in compressive stress. Film thickness and deposition pressure also affect the stress rate. By removing film layers with a plasma etch, the stress profile through the film thickness was determined. Tension results when silicon atoms deposit in the amorphous state and subsequently crystallize, but thermal stress, due to differences in expansion coefficient between the film and substrate, is ruled out as significant contributor to the film stress. By superposing the crystallization stress and a compressive intrinsic stress component that decreases with temperature, the observed stress trend is obtained.
Starting Page	949
Ending Page	952
File Size	367004
Page Count	4
File Format	PDF
ISBN	0879425857
DOI	10.1109/SENSOR.1991.149046
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1991-06-24
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon Compressive stress Thermal stresses Plasma temperature Tensile stress Semiconductor films Crystallization Plasma applications Etching Atomic layer deposition
Content Type	Text
Resource Type	Article

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