NDLI: Wide Dynamic Range CMOS Image Sensors for High Quality Digital Camera, Security, Automotive and Medical Applications

Content Provider	IEEE Xplore Digital Library
Author	Akahane, N. Sugawa, S. Adachi, S. Mizobuchi, K.
Copyright Year	2006
Description	Author affiliation: Tohoku Univ., Sendai (Akahane, N.; Sugawa, S.)
Abstract	Wide dynamic range (DR) CMOS image sensors featuring a lateral overflow integration capacitor in a pixel, which locates next to the floating diffusion and integrates the overflow photoelectrons from the fully depleted photodiode in the same integration term, have been developed. The DR has been extended to 100 dB in a single exposure by adding the minimum number of the circuit elements to the four transistors type CMOS image sensor, with a high sensitivity, a high S/N ratio and a superior moving image quality. The hyper DR extension over 200 dB, with the equivalent light intensity ranging from $10^{-2}$ 1x to $10^{8}$ 1x has also been achieved by the combination of the voltage readout operations of the above mentioned lateral overflow integration in multiple exposures and the current readout operation of amplifying the photodiode current. The S/N ratio dominated by all the noise components including the photon shot noise exceeds 40 dB in any switching point from low light to bright light.
Starting Page	396
Ending Page	399
File Size	4516385
Page Count	4
File Format	PDF
ISBN	1424403758
ISSN	19300395
DOI	10.1109/ICSENS.2007.355489
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-10-22
Publisher Place	South Korea
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Dynamic range CMOS image sensors Digital cameras Security Automotive engineering Medical services Biomedical equipment Photodiodes Signal to noise ratio Capacitors
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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